Growth and properties analysis of AlxGa2-xO3 thin film by radio frequency magnetron sputtering using Al/Ga2O3 target

Yiyin Nie; Shujie Jiao; Fanxi Meng; Hongliang Lu; Dongbo Wang; Lin Li; Shiyong Gao; Jinzhong Wang; Xianghu Wang

doi:10.1016/j.jallcom.2019.05.268

Growth and properties analysis of Al_xGa_2-xO₃ thin film by radio frequency magnetron sputtering using Al/Ga₂O₃ target

Yiyin Nie
, Shujie Jiao^*
, Fanxi Meng
, Hongliang Lu
, Dongbo Wang
, Lin Li
, Shiyong Gao
, Jinzhong Wang
, Xianghu Wang

^*Corresponding author for this work

Harbin Institute of Technology
Harbin Normal University
Shanghai Dianji University

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

In this work, (Al_xGa_1-x)₂O₃ thin films were grown on Al₂O₃ (0001)substrate by radio frequency magnetron sputtering using Al/Ga₂O₃ target. The analysis of crystalline structure, morphology, transmittance and bandgap after various annealing temperatures were investigated in detail. The films were oriented along (2—01)plane, and the crystalline quality improved with increasing annealing temperature. The stoichiometries of films can be regard as (Al_0.33Ga_0.67)₂O₃ according to X-ray photoelectron spectroscopy and the additional compressive stress in the sample which annealed at 900 °C was certified. The bandgap of annealed films was totally decreased due to increasing magnitude of compressive stress and grain size. Therefore, these results may suggest the way to tune the band gap of β-(Al_xGa_1-x)₂O₃ films by varying the residual stress through annealing and indicate the optimum annealing temperature for (Al_0.33Ga_0.67)₂O₃ thin films is about 800 °C.

Original language	English
Pages (from-to)	568-575
Number of pages	8
Journal	Journal of Alloys and Compounds
Volume	798
DOIs	https://doi.org/10.1016/j.jallcom.2019.05.268
State	Published - 25 Aug 2019
Externally published	Yes

Keywords

AlGa)O film
Annealing temperature
Compressive stress
Magnetron sputtering

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10.1016/j.jallcom.2019.05.268

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@article{98c59bf46ac84448951fcb02c81b86de,

title = "Growth and properties analysis of AlxGa2-xO3 thin film by radio frequency magnetron sputtering using Al/Ga2O3 target",

abstract = "In this work, (AlxGa1-x)2O3 thin films were grown on Al2O3 (0001)substrate by radio frequency magnetron sputtering using Al/Ga2O3 target. The analysis of crystalline structure, morphology, transmittance and bandgap after various annealing temperatures were investigated in detail. The films were oriented along (2—01)plane, and the crystalline quality improved with increasing annealing temperature. The stoichiometries of films can be regard as (Al0.33Ga0.67)2O3 according to X-ray photoelectron spectroscopy and the additional compressive stress in the sample which annealed at 900 °C was certified. The bandgap of annealed films was totally decreased due to increasing magnitude of compressive stress and grain size. Therefore, these results may suggest the way to tune the band gap of β-(AlxGa1-x)2O3 films by varying the residual stress through annealing and indicate the optimum annealing temperature for (Al0.33Ga0.67)2O3 thin films is about 800 °C.",

keywords = "AlGa)O film, Annealing temperature, Compressive stress, Magnetron sputtering",

author = "Yiyin Nie and Shujie Jiao and Fanxi Meng and Hongliang Lu and Dongbo Wang and Lin Li and Shiyong Gao and Jinzhong Wang and Xianghu Wang",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = aug,

day = "25",

doi = "10.1016/j.jallcom.2019.05.268",

language = "英语",

volume = "798",

pages = "568--575",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Growth and properties analysis of AlxGa2-xO3 thin film by radio frequency magnetron sputtering using Al/Ga2O3 target

AU - Nie, Yiyin

AU - Jiao, Shujie

AU - Meng, Fanxi

AU - Lu, Hongliang

AU - Wang, Dongbo

AU - Li, Lin

AU - Gao, Shiyong

AU - Wang, Jinzhong

AU - Wang, Xianghu

PY - 2019/8/25

Y1 - 2019/8/25

N2 - In this work, (AlxGa1-x)2O3 thin films were grown on Al2O3 (0001)substrate by radio frequency magnetron sputtering using Al/Ga2O3 target. The analysis of crystalline structure, morphology, transmittance and bandgap after various annealing temperatures were investigated in detail. The films were oriented along (2—01)plane, and the crystalline quality improved with increasing annealing temperature. The stoichiometries of films can be regard as (Al0.33Ga0.67)2O3 according to X-ray photoelectron spectroscopy and the additional compressive stress in the sample which annealed at 900 °C was certified. The bandgap of annealed films was totally decreased due to increasing magnitude of compressive stress and grain size. Therefore, these results may suggest the way to tune the band gap of β-(AlxGa1-x)2O3 films by varying the residual stress through annealing and indicate the optimum annealing temperature for (Al0.33Ga0.67)2O3 thin films is about 800 °C.

AB - In this work, (AlxGa1-x)2O3 thin films were grown on Al2O3 (0001)substrate by radio frequency magnetron sputtering using Al/Ga2O3 target. The analysis of crystalline structure, morphology, transmittance and bandgap after various annealing temperatures were investigated in detail. The films were oriented along (2—01)plane, and the crystalline quality improved with increasing annealing temperature. The stoichiometries of films can be regard as (Al0.33Ga0.67)2O3 according to X-ray photoelectron spectroscopy and the additional compressive stress in the sample which annealed at 900 °C was certified. The bandgap of annealed films was totally decreased due to increasing magnitude of compressive stress and grain size. Therefore, these results may suggest the way to tune the band gap of β-(AlxGa1-x)2O3 films by varying the residual stress through annealing and indicate the optimum annealing temperature for (Al0.33Ga0.67)2O3 thin films is about 800 °C.

KW - AlGa)O film

KW - Annealing temperature

KW - Compressive stress

KW - Magnetron sputtering

UR - https://www.scopus.com/pages/publications/85066232494

U2 - 10.1016/j.jallcom.2019.05.268

DO - 10.1016/j.jallcom.2019.05.268

M3 - 文章

AN - SCOPUS:85066232494

SN - 0925-8388

VL - 798

SP - 568

EP - 575

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Growth and properties analysis of Al_xGa_2-xO₃ thin film by radio frequency magnetron sputtering using Al/Ga₂O₃ target

Abstract

Keywords

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