Growth and Etching of Monolayer Hexagonal Boron Nitride

Lifeng Wang; Bin Wu; Lili Jiang; Jisi Chen; Yongtao Li; Wei Guo; Pingan Hu; Yunqi Liu

doi:10.1002/adma.201501166

Growth and Etching of Monolayer Hexagonal Boron Nitride

Lifeng Wang
, Bin Wu
, Lili Jiang
, Jisi Chen
, Yongtao Li
, Wei Guo
, Pingan Hu^*
, Yunqi Liu

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
Harbin Institute of Technology
CAS - Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H₂ etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.

Original language	English
Pages (from-to)	4858-4864
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	33
DOIs	https://doi.org/10.1002/adma.201501166
State	Published - 1 Sep 2015

Keywords

chemical vapor deposition
diffusion
growth and etching
hexagonal boron nitride

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10.1002/adma.201501166

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title = "Growth and Etching of Monolayer Hexagonal Boron Nitride",

abstract = "The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.",

keywords = "chemical vapor deposition, diffusion, growth and etching, hexagonal boron nitride",

author = "Lifeng Wang and Bin Wu and Lili Jiang and Jisi Chen and Yongtao Li and Wei Guo and Pingan Hu and Yunqi Liu",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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T1 - Growth and Etching of Monolayer Hexagonal Boron Nitride

AU - Wang, Lifeng

AU - Wu, Bin

AU - Jiang, Lili

AU - Chen, Jisi

AU - Li, Yongtao

AU - Guo, Wei

AU - Hu, Pingan

AU - Liu, Yunqi

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.

AB - The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.

KW - chemical vapor deposition

KW - diffusion

KW - growth and etching

KW - hexagonal boron nitride

UR - https://www.scopus.com/pages/publications/84940707299

U2 - 10.1002/adma.201501166

DO - 10.1002/adma.201501166

M3 - 文章

AN - SCOPUS:84940707299

SN - 0935-9648

VL - 27

SP - 4858

EP - 4864

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

Growth and Etching of Monolayer Hexagonal Boron Nitride

Abstract

Keywords

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