Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

S. Iwan; S. Bambang; J. L. Zhao; S. T. Tan; H. M. Fan; L. Sun; S. Zhang; H. H. Ryu; X. W. Sun

doi:10.1016/j.physb.2012.03.072

Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

S. Iwan^*
, S. Bambang
, J. L. Zhao
, S. T. Tan
, H. M. Fan
, L. Sun
, S. Zhang
, H. H. Ryu
, X. W. Sun

^*Corresponding author for this work

State University of Jakarta
University of Indonesia
Nanyang Technological University
National University of Singapore
Inje University

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er ³ ions doped in ZnO films.

Original language	English
Pages (from-to)	2721-2724
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	407
Issue number	14
DOIs	https://doi.org/10.1016/j.physb.2012.03.072
State	Published - 15 Jul 2012
Externally published	Yes

Keywords

Electron impact excitation
Photoluminescence
Room temperature
USP
ZnO:Er
n-ZnO:Er/p-Si heterojunctions

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10.1016/j.physb.2012.03.072

Cite this

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title = "Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode",

abstract = "Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er 3 ions doped in ZnO films.",

keywords = "Electron impact excitation, Photoluminescence, Room temperature, USP, ZnO:Er, n-ZnO:Er/p-Si heterojunctions",

author = "S. Iwan and S. Bambang and Zhao, \{J. L.\} and Tan, \{S. T.\} and Fan, \{H. M.\} and L. Sun and S. Zhang and Ryu, \{H. H.\} and Sun, \{X. W.\}",

year = "2012",

month = jul,

day = "15",

doi = "10.1016/j.physb.2012.03.072",

language = "英语",

volume = "407",

pages = "2721--2724",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "14",

}

TY - JOUR

T1 - Green electroluminescence from an n-ZnO

T2 - Er/p-Si heterostructured light-emitting diode

AU - Iwan, S.

AU - Bambang, S.

AU - Zhao, J. L.

AU - Tan, S. T.

AU - Fan, H. M.

AU - Sun, L.

AU - Zhang, S.

AU - Ryu, H. H.

AU - Sun, X. W.

PY - 2012/7/15

Y1 - 2012/7/15

N2 - Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er 3 ions doped in ZnO films.

AB - Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er 3 ions doped in ZnO films.

KW - Electron impact excitation

KW - Photoluminescence

KW - Room temperature

KW - USP

KW - ZnO:Er

KW - n-ZnO:Er/p-Si heterojunctions

UR - https://www.scopus.com/pages/publications/84861348216

U2 - 10.1016/j.physb.2012.03.072

DO - 10.1016/j.physb.2012.03.072

M3 - 文章

AN - SCOPUS:84861348216

SN - 0921-4526

VL - 407

SP - 2721

EP - 2724

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 14

ER -

Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

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Keywords

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