Abstract
Using first-principles calculations, we first reported that Janus group III chalcogenide monolayers have giant out-of-plane second harmonic generation susceptibility, and it is even 1-2 orders of magnitude larger than that of the in-plane components. In the Ga2SSe monolayer, the χzxx(2)/χxxy(2) and χzzz(2)/χxxy(2) are up to 125:1 and 86:1, respectively. The large intraband\interband velocity transition matrix and charge transfer are responsible for the strong second harmonic response of Janus group III chalcogenide monolayers. The present work provides a general protocol to design two-dimensional nonlinear optical materials with strong out-plane response for applications in optoelectronic and nonlinear optical devices.
| Original language | English |
|---|---|
| Pages (from-to) | 11285-11293 |
| Number of pages | 9 |
| Journal | Journal of Physical Chemistry C |
| Volume | 125 |
| Issue number | 20 |
| DOIs | |
| State | Published - 27 May 2021 |
| Externally published | Yes |
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