Gamma and X-ray sensitivity of Gd2O3 heterojunctions

Juan A. Colón Santana; C. M. Young; J. W. McClory; J. C. Petrosky; X. Wang; P. Liu; Jinke Tang; V. T. Adamiv; Ya V. Burak; Keisuke Fukutani; P. A. Dowben

doi:10.1016/j.radmeas.2013.02.021

Gamma and X-ray sensitivity of Gd₂O₃ heterojunctions

Juan A. Colón Santana
, C. M. Young
, J. W. McClory
, J. C. Petrosky
, X. Wang
, P. Liu
, Jinke Tang
, V. T. Adamiv
, Ya V. Burak
, Keisuke Fukutani
, P. A. Dowben^*

^*Corresponding author for this work

University of Nebraska-Lincoln
United States Air Force Institute of Technology
University of Wyoming
Vlokh Institute of Physical Optics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We find that Gd₂O₃ thin films strongly favor a (-402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Radiation Measurements
Volume	51-52
DOIs	https://doi.org/10.1016/j.radmeas.2013.02.021
State	Published - Apr 2013
Externally published	Yes

Keywords

Gd doping
Neutron detection
Oxide dielectric layers

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10.1016/j.radmeas.2013.02.021

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title = "Gamma and X-ray sensitivity of Gd2O3 heterojunctions",

abstract = "We find that Gd2O3 thin films strongly favor a (-402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.",

keywords = "Gd doping, Neutron detection, Oxide dielectric layers",

author = "\{Col{\'o}n Santana\}, \{Juan A.\} and Young, \{C. M.\} and McClory, \{J. W.\} and Petrosky, \{J. C.\} and X. Wang and P. Liu and Jinke Tang and Adamiv, \{V. T.\} and Burak, \{Ya V.\} and Keisuke Fukutani and Dowben, \{P. A.\}",

year = "2013",

month = apr,

doi = "10.1016/j.radmeas.2013.02.021",

language = "英语",

volume = "51-52",

pages = "99--102",

journal = "Radiation Measurements",

issn = "1350-4487",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Gamma and X-ray sensitivity of Gd2O3 heterojunctions

AU - Colón Santana, Juan A.

AU - Young, C. M.

AU - McClory, J. W.

AU - Petrosky, J. C.

AU - Wang, X.

AU - Liu, P.

AU - Tang, Jinke

AU - Adamiv, V. T.

AU - Burak, Ya V.

AU - Fukutani, Keisuke

AU - Dowben, P. A.

PY - 2013/4

Y1 - 2013/4

N2 - We find that Gd2O3 thin films strongly favor a (-402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.

AB - We find that Gd2O3 thin films strongly favor a (-402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.

KW - Gd doping

KW - Neutron detection

KW - Oxide dielectric layers

UR - https://www.scopus.com/pages/publications/84877707230

U2 - 10.1016/j.radmeas.2013.02.021

DO - 10.1016/j.radmeas.2013.02.021

M3 - 文章

AN - SCOPUS:84877707230

SN - 1350-4487

VL - 51-52

SP - 99

EP - 102

JO - Radiation Measurements

JF - Radiation Measurements

ER -

Gamma and X-ray sensitivity of Gd₂O₃ heterojunctions

Abstract

Keywords

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