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Gain characteristics of N2 molecular dimer at 352.3 nm

  • Zuo Chun Shen*
  • , Jian Ye Lu
  • , Hui De Gao
  • *Corresponding author for this work
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Utilizing microwave discharge to excite the high pure nitrogen, and adopting the method of amplified spontaneous emission, the gain characteristics of N2 molecular dimer at 352.3 nm is studied under different microwave exciting power and N2 pressure. The law that little signal gain coefficients of N2 molecular dimer at 352.3 nm change with microwave exciting power and N2 pressure inside discharge tube, is given along the axis of discharge tube. The results indicate that the stimulated emission characteristics of N2 molecular dimer at 352.3 nm exist, when the microwave power is greater than 100 W, and N2 pressure in the range from 330 to 1800 Pa. When microwave power is 500 W N2 pressure is 1100 Pa, the maximum little signal gain coefficient of N2 molecular dimer at 352.3 nm is 1.08% cm- along the axis of discharge tube. In addition, the gain distribution of N2 molecular dimer at 352.3 nm along the radial direction of discharge tube is also given. The gain coefficient of N2 molecular dimer at 352.3 nm is minimum at the centre of discharge tube, and maximum at the position close to the wall.

Original languageEnglish
Pages (from-to)10-15
Number of pages6
JournalGuangxue Jingmi Gongcheng/Optics and Precision Engineering
Volume13
Issue number1
StatePublished - Feb 2005

Keywords

  • Amplified spontaneous emission
  • Dimer
  • Gain

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