Abstract
The absorption efficiency of GaAs thin film photovoltaic devices from visible to nearinfrared band can be effectively improved by micro-nano anti-reflection cover (ARC) and micro-nano metal structure. In this paper, finite element method (FEM) is used to analyze the influence of the micro-nano anti-reflection cover on the spectral absorption of devices, and the photoelectric conversion characteristics of the corresponding structures are obtained. The influence of the arrangement of gold nanowires on the photoelectric characteristics is further explored. The results show that the micro-nano structure can effectively improve the photoelectric conversion capability. Mastering the influence law on the internal photoelectric characteristics can provide useful guidance for the device design and preparation.
| Translated title of the contribution | Photoelectric Conversion Characteristics of GaAs Thin Film Cells |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 2409-2413 |
| Number of pages | 5 |
| Journal | Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics |
| Volume | 42 |
| Issue number | 9 |
| State | Published - Sep 2021 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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