Future novel memory device fabrication, heterogenous integration and packaging innovations

^*Corresponding author for this work

Research output: Contribution to journal › Editorial

Original language	English
Article number	108998
Journal	Materials Science in Semiconductor Processing
Volume	185
DOIs	https://doi.org/10.1016/j.mssp.2024.108998
State	Published - Jan 2025

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title = "Future novel memory device fabrication, heterogenous integration and packaging innovations",

author = "Gan, \{Chong Leong\} and Huang, \{Chen Yu\} and Chen, \{Kuan Neng\} and Badwe, \{Nilesh U.\} and Shuye Zhang",

year = "2025",

month = jan,

doi = "10.1016/j.mssp.2024.108998",

language = "英语",

volume = "185",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Future novel memory device fabrication, heterogenous integration and packaging innovations

AU - Gan, Chong Leong

AU - Huang, Chen Yu

AU - Chen, Kuan Neng

AU - Badwe, Nilesh U.

AU - Zhang, Shuye

PY - 2025/1

Y1 - 2025/1

UR - https://www.scopus.com/pages/publications/85205680078

U2 - 10.1016/j.mssp.2024.108998

DO - 10.1016/j.mssp.2024.108998

M3 - 社论

AN - SCOPUS:85205680078

SN - 1369-8001

VL - 185

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 108998

ER -