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Fourier transformation infrared spectrum studies on the role of fluorine in SnO2:F films

  • B. Zhang*
  • , Y. Tian
  • , J. X. Zhang
  • , W. Cai
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • National Institute for Materials Science Tsukuba
  • Shandong University

Research output: Contribution to journalArticlepeer-review

Abstract

In this letter we employed Fourier transform infrared spectroscopy (FTIR) to study fluorine-doped SnO2 films deposited by spray pyrolysis. The role of oxygen vacancy and substitution of fluorine for oxygen are demonstrated by FTIR. It is found that at low doping levels, fluorine ions prefer to occupy oxygen positions in SnO2 lattice. While beyond a certain doping level, fluorine ions start to occupy interstitial positions, which has a negative effect on carrier concentration that, in turn, affects the infrared reflectivity of SnO2 films. FTIR also shows the increase of the disorder of SnO2 films with increasing fluorine doping.

Original languageEnglish
Article number021906
JournalApplied Physics Letters
Volume98
Issue number2
DOIs
StatePublished - 10 Jan 2011
Externally publishedYes

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