Formation of hydrogenated carbon nitride films by reactive sputtering

J. Wei

doi:10.1063/1.1518137

Formation of hydrogenated carbon nitride films by reactive sputtering

J. Wei^*

^*Corresponding author for this work

Agency for Science, Technology and Research, Singapore

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Hydrogenated carbon nitride films were synthesized on Si by direct current reactive sputtering with radio frequency bias in mixed N₂/H₂/Ar plasma. Transmission electron microscopy and transmission electron diffraction were used to examine the film microstructure and identify the phases. Results indicated that the film structure was strongly influenced by the presence of hydrogen during growth.

Original language	English
Pages (from-to)	6525-6530
Number of pages	6
Journal	Journal of Applied Physics
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.1518137
State	Published - 1 Dec 2002
Externally published	Yes

Access to Document

10.1063/1.1518137

Cite this

@article{074f7366d4f74a5a95ef6d2d48794b3f,

title = "Formation of hydrogenated carbon nitride films by reactive sputtering",

abstract = "Hydrogenated carbon nitride films were synthesized on Si by direct current reactive sputtering with radio frequency bias in mixed N2/H2/Ar plasma. Transmission electron microscopy and transmission electron diffraction were used to examine the film microstructure and identify the phases. Results indicated that the film structure was strongly influenced by the presence of hydrogen during growth.",

author = "J. Wei",

year = "2002",

month = dec,

day = "1",

doi = "10.1063/1.1518137",

language = "英语",

volume = "92",

pages = "6525--6530",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Formation of hydrogenated carbon nitride films by reactive sputtering

AU - Wei, J.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Hydrogenated carbon nitride films were synthesized on Si by direct current reactive sputtering with radio frequency bias in mixed N2/H2/Ar plasma. Transmission electron microscopy and transmission electron diffraction were used to examine the film microstructure and identify the phases. Results indicated that the film structure was strongly influenced by the presence of hydrogen during growth.

AB - Hydrogenated carbon nitride films were synthesized on Si by direct current reactive sputtering with radio frequency bias in mixed N2/H2/Ar plasma. Transmission electron microscopy and transmission electron diffraction were used to examine the film microstructure and identify the phases. Results indicated that the film structure was strongly influenced by the presence of hydrogen during growth.

UR - https://www.scopus.com/pages/publications/0036905367

U2 - 10.1063/1.1518137

DO - 10.1063/1.1518137

M3 - 文章

AN - SCOPUS:0036905367

SN - 0021-8979

VL - 92

SP - 6525

EP - 6530

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Formation of hydrogenated carbon nitride films by reactive sputtering

Abstract

Access to Document

Other files and links

Fingerprint

Cite this