Formation of high density stacking faults in polycrystalline 3C-SiC by vibration-assisted diamond cutting

Revealing the ductile deformation mechanisms of ultra-hard brittle cubic silicon carbide (3C-SiC), as well as their correlations with microstructure evolution, are crucial for facilitating the ductile machinability of the ceramic material. In the present work, we report the formation of highly oriented high density stacking faults accompanied with suppressed amorphization and cracking in polycrystalline 3C-SiC in ultrasonic elliptical vibration-assisted diamond cutting, which contributes to significantly enhanced ductile material removal of the ceramic material compared to ordinary cutting. Specifically, characterizations of Raman spectroscopy on machined surface and cross-sectional transmission electron microscopy on subsurface, as well as molecular dynamics simulations of the two kinds of cutting processes, are jointly performed to elucidate the mechanisms of phase transformation and microstructure evolution that govern the ductile material removal of polycrystalline 3C-SiC under the vibration assistance. In particular, the formation mechanisms of highly oriented high density stacking faults emitted from grain boundaries are revealed. Current findings provide insights into the ductile deformation behavior of hard brittle ceramics enhanced by field-assisted deformation process.