Formation mechanism of the porous zone at the bonded Si3N4/Ni interface

Xiaoguo Song; Duo Liu; Zhengyong Du; Jian Cao; Jicai Feng; Liyan Zhao

Formation mechanism of the porous zone at the bonded Si₃N₄/Ni interface

Xiaoguo Song
, Duo Liu
, Zhengyong Du
, Jian Cao^*
, Jicai Feng
, Liyan Zhao

^*Corresponding author for this work

Harbin Institute of Technology Weihai
China Aerospace Science and Industry Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

Diffusion bonding of Si₃N₄ ceramic to itself was performed using Ni interlayer. A flat Si₃N₄/Ni interface was found at a lower temperature (1273 K). Whereas at a higher temperature (1473 K), a porous zone located at the Si₃N₄/Ni interface and some petal-like Ni₃Si compounds precipitated in the Ni interlayer were observed. The formation mechanism of the porous zone was investigated based on a fracture analysis. An additional stress (σ_add) generated at the Si₃N₄/Ni interface played an important role in the formation of the porous zone, which was resulted from the aggregation of nitrogen during the bonding process. A calculation equation of the σ_add was derived to analyze its effects. The results indicated that σ_add was directly in dependent with diffusion bonding temperature and dwell time. Copyright:

Original language	English
Pages (from-to)	25-29
Number of pages	5
Journal	China Welding (English Edition)
Volume	22
Issue number	4
State	Published - Dec 2013

Keywords

Ceramics
Fracture analysis
Microstructure
Nickel interlayer
Wordsdiffusion bonding

Cite this

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title = "Formation mechanism of the porous zone at the bonded Si3N4/Ni interface",

abstract = "Diffusion bonding of Si3N4 ceramic to itself was performed using Ni interlayer. A flat Si3N4/Ni interface was found at a lower temperature (1273 K). Whereas at a higher temperature (1473 K), a porous zone located at the Si3N4/Ni interface and some petal-like Ni3Si compounds precipitated in the Ni interlayer were observed. The formation mechanism of the porous zone was investigated based on a fracture analysis. An additional stress (σadd) generated at the Si3N4/Ni interface played an important role in the formation of the porous zone, which was resulted from the aggregation of nitrogen during the bonding process. A calculation equation of the σadd was derived to analyze its effects. The results indicated that σadd was directly in dependent with diffusion bonding temperature and dwell time. Copyright:",

keywords = "Ceramics, Fracture analysis, Microstructure, Nickel interlayer, Wordsdiffusion bonding",

author = "Xiaoguo Song and Duo Liu and Zhengyong Du and Jian Cao and Jicai Feng and Liyan Zhao",

year = "2013",

month = dec,

language = "英语",

volume = "22",

pages = "25--29",

journal = "China Welding (English Edition)",

issn = "1004-5341",

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TY - JOUR

T1 - Formation mechanism of the porous zone at the bonded Si3N4/Ni interface

AU - Song, Xiaoguo

AU - Liu, Duo

AU - Du, Zhengyong

AU - Cao, Jian

AU - Feng, Jicai

AU - Zhao, Liyan

PY - 2013/12

Y1 - 2013/12

N2 - Diffusion bonding of Si3N4 ceramic to itself was performed using Ni interlayer. A flat Si3N4/Ni interface was found at a lower temperature (1273 K). Whereas at a higher temperature (1473 K), a porous zone located at the Si3N4/Ni interface and some petal-like Ni3Si compounds precipitated in the Ni interlayer were observed. The formation mechanism of the porous zone was investigated based on a fracture analysis. An additional stress (σadd) generated at the Si3N4/Ni interface played an important role in the formation of the porous zone, which was resulted from the aggregation of nitrogen during the bonding process. A calculation equation of the σadd was derived to analyze its effects. The results indicated that σadd was directly in dependent with diffusion bonding temperature and dwell time. Copyright:

AB - Diffusion bonding of Si3N4 ceramic to itself was performed using Ni interlayer. A flat Si3N4/Ni interface was found at a lower temperature (1273 K). Whereas at a higher temperature (1473 K), a porous zone located at the Si3N4/Ni interface and some petal-like Ni3Si compounds precipitated in the Ni interlayer were observed. The formation mechanism of the porous zone was investigated based on a fracture analysis. An additional stress (σadd) generated at the Si3N4/Ni interface played an important role in the formation of the porous zone, which was resulted from the aggregation of nitrogen during the bonding process. A calculation equation of the σadd was derived to analyze its effects. The results indicated that σadd was directly in dependent with diffusion bonding temperature and dwell time. Copyright:

KW - Ceramics

KW - Fracture analysis

KW - Microstructure

KW - Nickel interlayer

KW - Wordsdiffusion bonding

UR - https://www.scopus.com/pages/publications/84894516569

M3 - 文章

AN - SCOPUS:84894516569

SN - 1004-5341

VL - 22

SP - 25

EP - 29

JO - China Welding (English Edition)

JF - China Welding (English Edition)

IS - 4

ER -

Formation mechanism of the porous zone at the bonded Si₃N₄/Ni interface

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Keywords

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