Flash joining of SiC at ultra-low temperature

Long Zhou; Chun Li; Xiaoqing Si; Chenghao Zhang; Bo Yang; Junlei Qi; Jian Cao

doi:10.1016/j.jeurceramsoc.2023.01.013

Flash joining of SiC at ultra-low temperature

Long Zhou
, Chun Li^*
, Xiaoqing Si
, Chenghao Zhang
, Bo Yang
, Junlei Qi
, Jian Cao

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In this study, the flash joining of silicon carbide (SiC) at an ultra-low furnace temperature of 400 ℃ was achieved in air by applying a direct current (DC) electric field. The voltage and current trends are related to the ‘flash’ phenomenon of the joining process. The interface temperature ranged from 990 ℃ to 950 ℃ during joining. The flash joining of SiC was realised by electric field-assisted in situ oxidation to form amorphous SiO₂ at the interface.

Original language	English
Pages (from-to)	2713-2717
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	43
Issue number	6
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2023.01.013
State	Published - Jun 2023

Keywords

Electric field
Flash joining
Oxidation
SiC

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10.1016/j.jeurceramsoc.2023.01.013

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title = "Flash joining of SiC at ultra-low temperature",

abstract = "In this study, the flash joining of silicon carbide (SiC) at an ultra-low furnace temperature of 400 ℃ was achieved in air by applying a direct current (DC) electric field. The voltage and current trends are related to the {\textquoteleft}flash{\textquoteright} phenomenon of the joining process. The interface temperature ranged from 990 ℃ to 950 ℃ during joining. The flash joining of SiC was realised by electric field-assisted in situ oxidation to form amorphous SiO2 at the interface.",

keywords = "Electric field, Flash joining, Oxidation, SiC",

author = "Long Zhou and Chun Li and Xiaoqing Si and Chenghao Zhang and Bo Yang and Junlei Qi and Jian Cao",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = jun,

doi = "10.1016/j.jeurceramsoc.2023.01.013",

language = "英语",

volume = "43",

pages = "2713--2717",

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TY - JOUR

T1 - Flash joining of SiC at ultra-low temperature

AU - Zhou, Long

AU - Li, Chun

AU - Si, Xiaoqing

AU - Zhang, Chenghao

AU - Yang, Bo

AU - Qi, Junlei

AU - Cao, Jian

PY - 2023/6

Y1 - 2023/6

N2 - In this study, the flash joining of silicon carbide (SiC) at an ultra-low furnace temperature of 400 ℃ was achieved in air by applying a direct current (DC) electric field. The voltage and current trends are related to the ‘flash’ phenomenon of the joining process. The interface temperature ranged from 990 ℃ to 950 ℃ during joining. The flash joining of SiC was realised by electric field-assisted in situ oxidation to form amorphous SiO2 at the interface.

AB - In this study, the flash joining of silicon carbide (SiC) at an ultra-low furnace temperature of 400 ℃ was achieved in air by applying a direct current (DC) electric field. The voltage and current trends are related to the ‘flash’ phenomenon of the joining process. The interface temperature ranged from 990 ℃ to 950 ℃ during joining. The flash joining of SiC was realised by electric field-assisted in situ oxidation to form amorphous SiO2 at the interface.

KW - Electric field

KW - Flash joining

KW - Oxidation

KW - SiC

UR - https://www.scopus.com/pages/publications/85146338451

U2 - 10.1016/j.jeurceramsoc.2023.01.013

DO - 10.1016/j.jeurceramsoc.2023.01.013

M3 - 文章

AN - SCOPUS:85146338451

SN - 0955-2219

VL - 43

SP - 2713

EP - 2717

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 6

ER -

Flash joining of SiC at ultra-low temperature

Abstract

Keywords

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