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First-principles study on Mn-doped TiFeSb half-heusler thermoelectric materials

  • Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The 8.33at% Mn-doped TiFeSb half-heusler thermoelectric materials were studied by first-principles in this paper. The space occupying of Mn atoms in Mn-doped TiFeSb system was studied according to thermodynamic stability, mechanical stability, and density of states at the Fermi level. The results show that Mn atoms would substitute Ti atoms preferentially at 8.33at% doping amount. The electronic and phonon transport properties were calculated in TiFeSb and (Ti0.75Mn0.25)FeSb to characterize their electronic and thermal conductivity. The results indicate that Mn-doping can increase the power factor due to improving the electronic conductivity while reducing the lattice thermal conductivity. Therefore, the (Ti0.75Mn0.25)FeSb are expected to show better thermoelectric properties than TiFeSb.

Original languageEnglish
Title of host publicationPhysical and Numerical Simulation of Materials Processing VII
PublisherTrans Tech Publications Ltd
Pages471-475
Number of pages5
ISBN (Print)9783037857281
DOIs
StatePublished - 2013
Externally publishedYes
Event7th International Conference on Physical and Numerical Simulation of Materials Processing, ICPNS 2013 - Oulu, Finland
Duration: 16 Jun 201319 Jun 2013

Publication series

NameMaterials Science Forum
Volume762
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference7th International Conference on Physical and Numerical Simulation of Materials Processing, ICPNS 2013
Country/TerritoryFinland
CityOulu
Period16/06/1319/06/13

Keywords

  • First-principles
  • Half-heusler compounds
  • Thermoelectric materials
  • TiFeSb

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