Abstract
Based on the first-principles calculations, the electronic structure and magnetic properties of (Al,Mn) codoped BaZn2As2 have been investigated. We find that only Al atom doped BaZn2As2 is a nonmagnetic semiconductor with a band gap of 0.7 eV. Exploiting (Zn2+,Mn2+) substitutions to introduce magnetic moments, the Ba(Zn,Mn)2As2 system prefers the AFM ground state. For one Al atom and Mn codoped BaZn2As2, the long-range Mn-Mn pair configuration turns into FM state, while the nearest neighbour Mn-Mn pair configuration remains AFM state. However, because of more electron introduced by increasing the Al dopant, the nearest neighbour Mn-Mn pair configuration transfers from AFM to FM. Our investigation reveals that the FM coupling is mediated by the exchange interaction of Mn-3d orbitals and As-4p orbitals. The FM originates from a strong p-d exchange interaction occurred between carriers and localized spin for the (Ba,Al)(Zn,Mn)2As2.
| Original language | English |
|---|---|
| Pages (from-to) | 387-392 |
| Number of pages | 6 |
| Journal | Journal of Alloys and Compounds |
| Volume | 783 |
| DOIs | |
| State | Published - 30 Apr 2019 |
Keywords
- BaZnAs
- Decoupled charge and spin
- Electronic structure
- Ferromagnetism
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