TY - GEN
T1 - Finite-element calculations of elastic fields within flip-chip solder bumps and Cu-pillar bumps under the influences of thermal stresses and joule heating
AU - Zhou, Peng
AU - Zhao, Baojie
AU - Zhen, Yubao
AU - Liu, Shuo
AU - Hu, Yuehua
AU - Li, Jiayu
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/9/19
Y1 - 2017/9/19
N2 - In this paper, finite-element models were developed to calculate the elastic fields within both solder and Cu-pillar bumps under the influences of thermal stresses and Joule heating. First, a steady-state equation of the electric potential is solved to determine the electric field and thus, the effect of Joule heating. Then, the temperature field is obtained by solving a steady-state equation of thermal conduction under the influence of Joule heating. Finally, the elastic displacements are determined by solving the quasi-stationary Cauchy-Navier equations subjecting to the effects of thermal stresses. Using our finite element models, the elastic stresses are obtained and then the von Mises stress is calculated to indicate the magnitude of elastic distortion within the bumps. Modeling results show that: (1) under the influences of external stresses only and with the same magnitude of the applied external stresses, the maximums of Mises stresses in solder bumps are much higher than those in Cu-pillar bumps, moreover, within both solder and Cu-pillar bumps, the shearing stress tends to results in a higher maximum of Mises stress than the tensile stress; (2) for both bumps at service, the thermal stresses becomes dominant, especially at the lower external stresses, and furthermore, within both bumps, the maximum of Mises stresses decreases as the tensile stress increases while it increases as the shearing stresses increases; (3) the maximum of the Mises stresses increases linearly as the average temperature of the bumps increases with that in the Cu-pillar bump a bit higher, and in addition, the increase in current densities has a stronger influence on the maximum of the Mises stresses in the solder bump than that in the Cu-pillar bump.
AB - In this paper, finite-element models were developed to calculate the elastic fields within both solder and Cu-pillar bumps under the influences of thermal stresses and Joule heating. First, a steady-state equation of the electric potential is solved to determine the electric field and thus, the effect of Joule heating. Then, the temperature field is obtained by solving a steady-state equation of thermal conduction under the influence of Joule heating. Finally, the elastic displacements are determined by solving the quasi-stationary Cauchy-Navier equations subjecting to the effects of thermal stresses. Using our finite element models, the elastic stresses are obtained and then the von Mises stress is calculated to indicate the magnitude of elastic distortion within the bumps. Modeling results show that: (1) under the influences of external stresses only and with the same magnitude of the applied external stresses, the maximums of Mises stresses in solder bumps are much higher than those in Cu-pillar bumps, moreover, within both solder and Cu-pillar bumps, the shearing stress tends to results in a higher maximum of Mises stress than the tensile stress; (2) for both bumps at service, the thermal stresses becomes dominant, especially at the lower external stresses, and furthermore, within both bumps, the maximum of Mises stresses decreases as the tensile stress increases while it increases as the shearing stresses increases; (3) the maximum of the Mises stresses increases linearly as the average temperature of the bumps increases with that in the Cu-pillar bump a bit higher, and in addition, the increase in current densities has a stronger influence on the maximum of the Mises stresses in the solder bump than that in the Cu-pillar bump.
KW - Cu-pillar bumps
KW - Finite-element models
KW - Flip-chip solder bumps
KW - Joule heating
KW - Thermal stresses
UR - https://www.scopus.com/pages/publications/85032794178
U2 - 10.1109/ICEPT.2017.8046519
DO - 10.1109/ICEPT.2017.8046519
M3 - 会议稿件
AN - SCOPUS:85032794178
T3 - 18th International Conference on Electronic Packaging Technology, ICEPT 2017
SP - 569
EP - 574
BT - 18th International Conference on Electronic Packaging Technology, ICEPT 2017
A2 - Wang, Chenxi
A2 - Tian, Yanhong
A2 - Ye, Tianchun
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th International Conference on Electronic Packaging Technology, ICEPT 2017
Y2 - 16 August 2017 through 19 August 2017
ER -