Field emission from amorphous carbon nitride films deposited on silicon tip arrays

Jun Jie Li; Wei Tao Zheng; Long Sun; Hai Jiao Bian; Zeng Sun Jin; Hai Feng Zhao; Hang Song; Song He Meng; Xiao Dong He; Jie Cai Han

doi:10.1088/0256-307X/20/6/348

Field emission from amorphous carbon nitride films deposited on silicon tip arrays

Jun Jie Li^*
, Wei Tao Zheng
, Long Sun
, Hai Jiao Bian
, Zeng Sun Jin
, Hai Feng Zhao
, Hang Song
, Song He Meng
, Xiao Dong He
, Jie Cai Han

^*Corresponding author for this work

School of Astronautics

Jilin University
Yanbian University
CAS - Changchun Institute of Optics Fine Mechanics and Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Amorphous carbon nitride Elms (a-CN_x) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CN_x films. In addition, the films deposited on silicon tips have a smaller effective work function (F = 0.024 eV) of electron field emission than that on silicon wafer (F = 0.060eV), which indicates a significant enhancement of the ability of electron field emission from a-CN_x films.

Original language	English
Pages (from-to)	944-946
Number of pages	3
Journal	Chinese Physics Letters
Volume	20
Issue number	6
DOIs	https://doi.org/10.1088/0256-307X/20/6/348
State	Published - Jun 2003

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Cite this

@article{15bc068bea874138bfd444ffa5d63352,

title = "Field emission from amorphous carbon nitride films deposited on silicon tip arrays",

abstract = "Amorphous carbon nitride Elms (a-CNx) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CNx films. In addition, the films deposited on silicon tips have a smaller effective work function (F = 0.024 eV) of electron field emission than that on silicon wafer (F = 0.060eV), which indicates a significant enhancement of the ability of electron field emission from a-CNx films.",

author = "Li, \{Jun Jie\} and Zheng, \{Wei Tao\} and Long Sun and Bian, \{Hai Jiao\} and Jin, \{Zeng Sun\} and Zhao, \{Hai Feng\} and Hang Song and Meng, \{Song He\} and He, \{Xiao Dong\} and Han, \{Jie Cai\}",

year = "2003",

month = jun,

doi = "10.1088/0256-307X/20/6/348",

language = "英语",

volume = "20",

pages = "944--946",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Field emission from amorphous carbon nitride films deposited on silicon tip arrays

AU - Li, Jun Jie

AU - Zheng, Wei Tao

AU - Sun, Long

AU - Bian, Hai Jiao

AU - Jin, Zeng Sun

AU - Zhao, Hai Feng

AU - Song, Hang

AU - Meng, Song He

AU - He, Xiao Dong

AU - Han, Jie Cai

PY - 2003/6

Y1 - 2003/6

N2 - Amorphous carbon nitride Elms (a-CNx) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CNx films. In addition, the films deposited on silicon tips have a smaller effective work function (F = 0.024 eV) of electron field emission than that on silicon wafer (F = 0.060eV), which indicates a significant enhancement of the ability of electron field emission from a-CNx films.

AB - Amorphous carbon nitride Elms (a-CNx) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CNx films. In addition, the films deposited on silicon tips have a smaller effective work function (F = 0.024 eV) of electron field emission than that on silicon wafer (F = 0.060eV), which indicates a significant enhancement of the ability of electron field emission from a-CNx films.

UR - https://www.scopus.com/pages/publications/0038237062

U2 - 10.1088/0256-307X/20/6/348

DO - 10.1088/0256-307X/20/6/348

M3 - 文章

AN - SCOPUS:0038237062

SN - 0256-307X

VL - 20

SP - 944

EP - 946

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 6

ER -

Field emission from amorphous carbon nitride films deposited on silicon tip arrays

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