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Ferroelectric behavior of titanium oxygen octahedral amorphous CaCu 3Ti4O12 thin film

  • Harbin Institute of Technology
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

CaCu3Ti4O12 thin films were prepared on Pt/Ti/SiO2/Si substrate by a sol-gel method. A ferroelectric hysteresis loop was obtained at room temperature for amorphous CaCu 3Ti4O12 thin film. The ferroelectric characteristic of amorphous CaCu3Ti4O12 thin film was corroborated by the observation of piezoresponse force microscopy. The result indicates that there exists correlated intrinsic electric dipole moment in amorphous CaCu3Ti4O12 thin film, and the origin of ferroelectricity in amorphous CaCu3Ti4O 12 thin film is also discussed.

Original languageEnglish
Pages (from-to)394-397
Number of pages4
JournalMaterials Chemistry and Physics
Volume129
Issue number1-2
DOIs
StatePublished - 15 Sep 2011

Keywords

  • A. Electronic materials
  • B. Sol-gel growth
  • C. Electronic characterisation
  • C. Grazing incidence X-ray diffraction

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