Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction

Xianjie Wang; Bingqian Song; Mingxue Huo; Yunfei Song; Zhe Lv; Yu Zhang; Yang Wang; Yongli Song; Jiahong Wen; Yu Sui; Jinke Tang

doi:10.1039/c5ra11872g

Fast and sensitive lateral photovoltaic effects in Fe₃O₄/Si Schottky junction

Xianjie Wang
, Bingqian Song
, Mingxue Huo^*
, Yunfei Song
, Zhe Lv
, Yu Zhang
, Yang Wang
, Yongli Song
, Jiahong Wen
, Yu Sui
, Jinke Tang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe₃O₄/Si junction. Good rectifying I-V characteristics and large LPE are observed in the Fe₃O₄/Si junction. The LPE exhibits a linear dependence on the position of the laser spot, and the position sensitivity can reach 32.5 mV mm^-1. The optical response time and relaxation time of LPE were ∼60 ns and 5 μs, respectively. The enhanced LPE properties and the fast relaxation time in the Fe₃O₄/Si junction were caused by the formation of the inversion layer in the interface of Fe₃O₄/Si.

Original language	English
Pages (from-to)	65048-65051
Number of pages	4
Journal	RSC Advances
Volume	5
Issue number	80
DOIs	https://doi.org/10.1039/c5ra11872g
State	Published - 24 Jul 2015

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10.1039/c5ra11872g

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title = "Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction",

abstract = "In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe3O4/Si junction. Good rectifying I-V characteristics and large LPE are observed in the Fe3O4/Si junction. The LPE exhibits a linear dependence on the position of the laser spot, and the position sensitivity can reach 32.5 mV mm-1. The optical response time and relaxation time of LPE were ∼60 ns and 5 μs, respectively. The enhanced LPE properties and the fast relaxation time in the Fe3O4/Si junction were caused by the formation of the inversion layer in the interface of Fe3O4/Si.",

author = "Xianjie Wang and Bingqian Song and Mingxue Huo and Yunfei Song and Zhe Lv and Yu Zhang and Yang Wang and Yongli Song and Jiahong Wen and Yu Sui and Jinke Tang",

note = "Publisher Copyright: {\textcopyright} 2015 The Royal Society of Chemistry.",

year = "2015",

month = jul,

day = "24",

doi = "10.1039/c5ra11872g",

language = "英语",

volume = "5",

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TY - JOUR

T1 - Fast and sensitive lateral photovoltaic effects in Fe3O4/Si Schottky junction

AU - Wang, Xianjie

AU - Song, Bingqian

AU - Huo, Mingxue

AU - Song, Yunfei

AU - Lv, Zhe

AU - Zhang, Yu

AU - Wang, Yang

AU - Song, Yongli

AU - Wen, Jiahong

AU - Sui, Yu

AU - Tang, Jinke

PY - 2015/7/24

Y1 - 2015/7/24

N2 - In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe3O4/Si junction. Good rectifying I-V characteristics and large LPE are observed in the Fe3O4/Si junction. The LPE exhibits a linear dependence on the position of the laser spot, and the position sensitivity can reach 32.5 mV mm-1. The optical response time and relaxation time of LPE were ∼60 ns and 5 μs, respectively. The enhanced LPE properties and the fast relaxation time in the Fe3O4/Si junction were caused by the formation of the inversion layer in the interface of Fe3O4/Si.

AB - In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe3O4/Si junction. Good rectifying I-V characteristics and large LPE are observed in the Fe3O4/Si junction. The LPE exhibits a linear dependence on the position of the laser spot, and the position sensitivity can reach 32.5 mV mm-1. The optical response time and relaxation time of LPE were ∼60 ns and 5 μs, respectively. The enhanced LPE properties and the fast relaxation time in the Fe3O4/Si junction were caused by the formation of the inversion layer in the interface of Fe3O4/Si.

UR - https://www.scopus.com/pages/publications/84938702532

U2 - 10.1039/c5ra11872g

DO - 10.1039/c5ra11872g

M3 - 文章

AN - SCOPUS:84938702532

SN - 2046-2069

VL - 5

SP - 65048

EP - 65051

JO - RSC Advances

JF - RSC Advances

IS - 80

ER -

Fast and sensitive lateral photovoltaic effects in Fe₃O₄/Si Schottky junction

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