Fabrication of Multilayer Borophene on Insulator Structure

Researchers combined the plasma-assisted process with the boron ion implantation to fabricate a multilayer β-borophene on insulator structure for future applications. The boron atoms were squeezed out of the surface to form the borophene layers. The conditions of synthesis process have been nearly optimized, as SiGe and boron-implanted p⁺ -Si were analogous. The synthesis of borophene layers started from the N₂ plasma exposure with different powers for 30 minutes followed by annealing at 800 °C for 30 minutes.