Fabrication of Al2O3-mullite-AlN multiphase ceramic layer on W-Cu substrates for power semiconductor packaging

Jiandong Zhu; Rong An; Chunqing Wang; Guangwu Wen

doi:10.1109/TCPMT.2014.2375316

Fabrication of Al₂O₃-mullite-AlN multiphase ceramic layer on W-Cu substrates for power semiconductor packaging

Jiandong Zhu
, Rong An
, Chunqing Wang
, Guangwu Wen

Faculty of Life Sciences and Medicine

Harbin Institute of Technology
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This paper proposes a novel method to manufacture ceramic insulated metal substrate for power semiconductor modules and high-temperature electronics. α -Al₂O₃-mullite (Al₆Si₂O₁₃)-AlN multiphase ceramic layer was fabricated on W80Cu20/Cr substrate at 1050 °C by firing. The polycarbosilane-AlN green ceramic layer was synthesized by spin processor, and then was fired under a steady flow of wet nitrogen Al-Si-O nanocrystalline rods were formed and their diameters were about 100 nm. The α -Al₂O₃-mullite-AlN multiphase ceramic layer had perfect interface bonding, and exhibited superior mechanical properties and thermal shock resistance.

Original language	English
Article number	7015595
Pages (from-to)	182-187
Number of pages	6
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/TCPMT.2014.2375316
State	Published - 1 Feb 2015

Keywords

ceramic insulated metal substrate (IMS)
high-temperature electronics
power semiconductor module
α- AlO-mullite-AlN

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10.1109/TCPMT.2014.2375316

Cite this

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title = "Fabrication of Al2O3-mullite-AlN multiphase ceramic layer on W-Cu substrates for power semiconductor packaging",

abstract = "This paper proposes a novel method to manufacture ceramic insulated metal substrate for power semiconductor modules and high-temperature electronics. α -Al2O3-mullite (Al6Si2O13)-AlN multiphase ceramic layer was fabricated on W80Cu20/Cr substrate at 1050 °C by firing. The polycarbosilane-AlN green ceramic layer was synthesized by spin processor, and then was fired under a steady flow of wet nitrogen Al-Si-O nanocrystalline rods were formed and their diameters were about 100 nm. The α -Al2O3-mullite-AlN multiphase ceramic layer had perfect interface bonding, and exhibited superior mechanical properties and thermal shock resistance.",

keywords = "ceramic insulated metal substrate (IMS), high-temperature electronics, power semiconductor module, α- AlO-mullite-AlN",

author = "Jiandong Zhu and Rong An and Chunqing Wang and Guangwu Wen",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2015",

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doi = "10.1109/TCPMT.2014.2375316",

language = "英语",

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T1 - Fabrication of Al2O3-mullite-AlN multiphase ceramic layer on W-Cu substrates for power semiconductor packaging

AU - Zhu, Jiandong

AU - An, Rong

AU - Wang, Chunqing

AU - Wen, Guangwu

PY - 2015/2/1

Y1 - 2015/2/1

N2 - This paper proposes a novel method to manufacture ceramic insulated metal substrate for power semiconductor modules and high-temperature electronics. α -Al2O3-mullite (Al6Si2O13)-AlN multiphase ceramic layer was fabricated on W80Cu20/Cr substrate at 1050 °C by firing. The polycarbosilane-AlN green ceramic layer was synthesized by spin processor, and then was fired under a steady flow of wet nitrogen Al-Si-O nanocrystalline rods were formed and their diameters were about 100 nm. The α -Al2O3-mullite-AlN multiphase ceramic layer had perfect interface bonding, and exhibited superior mechanical properties and thermal shock resistance.

AB - This paper proposes a novel method to manufacture ceramic insulated metal substrate for power semiconductor modules and high-temperature electronics. α -Al2O3-mullite (Al6Si2O13)-AlN multiphase ceramic layer was fabricated on W80Cu20/Cr substrate at 1050 °C by firing. The polycarbosilane-AlN green ceramic layer was synthesized by spin processor, and then was fired under a steady flow of wet nitrogen Al-Si-O nanocrystalline rods were formed and their diameters were about 100 nm. The α -Al2O3-mullite-AlN multiphase ceramic layer had perfect interface bonding, and exhibited superior mechanical properties and thermal shock resistance.

KW - ceramic insulated metal substrate (IMS)

KW - high-temperature electronics

KW - power semiconductor module

KW - α- AlO-mullite-AlN

UR - https://www.scopus.com/pages/publications/85027946548

U2 - 10.1109/TCPMT.2014.2375316

DO - 10.1109/TCPMT.2014.2375316

M3 - 文章

AN - SCOPUS:85027946548

SN - 2156-3950

VL - 5

SP - 182

EP - 187

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

IS - 2

M1 - 7015595

ER -

Fabrication of Al₂O₃-mullite-AlN multiphase ceramic layer on W-Cu substrates for power semiconductor packaging

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