Extremely large magnetoresistance in high quality magnetic Fe₂Ge₃ single crystals

Extremely large magnetoresistance (XMR) is typically observed in topological materials as associated with factors such as high mobility carriers and electron-hole compensation. However, its occurrence in magnetic materials is rather rare due to the stability of the electron spin in magnetic fields. In this study, the synthesis of high-quality single crystals of Fe₂Ge₃ with the highest residual resistivity ratio (RRR = 4778) has allowed to explore its intrinsic magnetic and electrical transport properties, revealing a narrow-gap semiconductor nature with a high XMR of 2057% at 1.8 K and 12 T. In addition, Fe₂Ge₃ is able to bridge the gap between magnetism and XMR. These findings not only advance our understanding of Fe₂Ge₃, but also open avenues for the development of spintronic devices and other technologies based on magnetic semiconductors.