Exploration of Ba3N2 flux for GaN single-crystal growth

H. Q. Bao; H. Li; G. Wang; B. Song; W. J. Wang; X. L. Chen

doi:10.1016/j.jcrysgro.2008.02.023

Exploration of Ba₃N₂ flux for GaN single-crystal growth

H. Q. Bao
, H. Li
, G. Wang
, B. Song
, W. J. Wang
, X. L. Chen^*

^*Corresponding author for this work

CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Here, we report the exploration of Ba₃N₂ as a new flux to grow GaN single crystals from a Ga melt at 900 °C and under a nitrogen pressure of about 2 atm. Scanning electron microscope (SEM) observations indicated that regular pyramidal crystals with a size of 10-20 μm were obtained. Raman scattering measurement confirmed the axial direction of crystals as the c-direction. Morphological features of crystals were compared with that of GaN crystals grown by using Li₃N, Na and Ca₃N₂ flux. These results prove that Ba₃N₂ is an effective new flux for growing GaN crystals.

Original language	English
Pages (from-to)	2955-2959
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	12
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.02.023
State	Published - 1 Jun 2008
Externally published	Yes

Keywords

A1. Characterization
A1. Crystal morphology
A1. X-ray diffraction
A2. Single crystal growth
B1. Nitrides
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2008.02.023

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title = "Exploration of Ba3N2 flux for GaN single-crystal growth",

abstract = "Here, we report the exploration of Ba3N2 as a new flux to grow GaN single crystals from a Ga melt at 900 °C and under a nitrogen pressure of about 2 atm. Scanning electron microscope (SEM) observations indicated that regular pyramidal crystals with a size of 10-20 μm were obtained. Raman scattering measurement confirmed the axial direction of crystals as the c-direction. Morphological features of crystals were compared with that of GaN crystals grown by using Li3N, Na and Ca3N2 flux. These results prove that Ba3N2 is an effective new flux for growing GaN crystals.",

keywords = "A1. Characterization, A1. Crystal morphology, A1. X-ray diffraction, A2. Single crystal growth, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Bao, \{H. Q.\} and H. Li and G. Wang and B. Song and Wang, \{W. J.\} and Chen, \{X. L.\}",

year = "2008",

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doi = "10.1016/j.jcrysgro.2008.02.023",

language = "英语",

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pages = "2955--2959",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Exploration of Ba3N2 flux for GaN single-crystal growth

AU - Bao, H. Q.

AU - Li, H.

AU - Wang, G.

AU - Song, B.

AU - Wang, W. J.

AU - Chen, X. L.

PY - 2008/6/1

Y1 - 2008/6/1

N2 - Here, we report the exploration of Ba3N2 as a new flux to grow GaN single crystals from a Ga melt at 900 °C and under a nitrogen pressure of about 2 atm. Scanning electron microscope (SEM) observations indicated that regular pyramidal crystals with a size of 10-20 μm were obtained. Raman scattering measurement confirmed the axial direction of crystals as the c-direction. Morphological features of crystals were compared with that of GaN crystals grown by using Li3N, Na and Ca3N2 flux. These results prove that Ba3N2 is an effective new flux for growing GaN crystals.

AB - Here, we report the exploration of Ba3N2 as a new flux to grow GaN single crystals from a Ga melt at 900 °C and under a nitrogen pressure of about 2 atm. Scanning electron microscope (SEM) observations indicated that regular pyramidal crystals with a size of 10-20 μm were obtained. Raman scattering measurement confirmed the axial direction of crystals as the c-direction. Morphological features of crystals were compared with that of GaN crystals grown by using Li3N, Na and Ca3N2 flux. These results prove that Ba3N2 is an effective new flux for growing GaN crystals.

KW - A1. Characterization

KW - A1. Crystal morphology

KW - A1. X-ray diffraction

KW - A2. Single crystal growth

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/44149119060

U2 - 10.1016/j.jcrysgro.2008.02.023

DO - 10.1016/j.jcrysgro.2008.02.023

M3 - 文章

AN - SCOPUS:44149119060

SN - 0022-0248

VL - 310

SP - 2955

EP - 2959

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 12

ER -

Exploration of Ba₃N₂ flux for GaN single-crystal growth

Abstract

Keywords

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