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Experimental Study on SEL of a COTS 3D NAND Flash Memory and SEL Protection

  • School of Astronautics, Harbin Institute of Technology
  • School of Physics, Harbin Institute of Technology
  • China Aerospace Components Engineering Center

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we studied the Single Event Latch-up (SEL) effect of a Commercial Off-The-Shelf (COTS) 3D charge trap NAND Flash memory by using heavy ion accelerator. It is found that the SEL effect of the 3D NAND Flash is very sensitive. Through experimental research, we located the SEL sensitive area is the periphery. We designed a SEL protection circuit which is resistant to radiation, and verified the effectiveness of the SEL protection. This approach allows the use of COTS components in space, reducing costs while providing protection against critical SEL effects without special radiation hardening techniques.

Original languageEnglish
Title of host publication2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331549299
DOIs
StatePublished - 2025
Externally publishedYes
Event6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025 - Yangzhou, China
Duration: 16 Apr 202518 Apr 2025

Publication series

Name2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025

Conference

Conference6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025
Country/TerritoryChina
CityYangzhou
Period16/04/2518/04/25

Keywords

  • Commercial Off-The-Shelf
  • NAND flash
  • single event latch-up

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