Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C

Qingkui Yu; Shuang Cao; He Lv; Yi Sun; Rigen Mo; Qianyuan Wang; Bo Mei; Hongwei Zhang; Chaoming Liu; Xuefeng Yu

doi:10.1016/j.microrel.2022.114744

Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C

Qingkui Yu^*
, Shuang Cao
, He Lv
, Yi Sun
, Rigen Mo
, Qianyuan Wang
, Bo Mei
, Hongwei Zhang
, Chaoming Liu
, Xuefeng Yu

^*Corresponding author for this work

School of Astronautics

China Aerospace Science and Technology Corporation
Xinjiang Technical Institute of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The influence of temperature on the total ionizing dose response of silicon carbide (SiC) metal-oxide-semiconductor filed effect transistors (MOSFETs) was experimentally studied by γ-rays irradiation at temperatures ranging from −233 °C to 175 °C. Electrical parameters were investigated with Current-Voltage (I-V) measurements. Results showed that the threshold voltage shifted toward negative post-irradiation due to the radiation-induced oxide trapped charges. The shift of threshold voltage was a function of irradiation temperature. The shift of threshold voltage increased as temperature decreased. The reason was that there were less annealing for the radiation-induced oxide trapped charges at low temperatures.

Original language	English
Article number	114744
Journal	Microelectronics Reliability
Volume	138
DOIs	https://doi.org/10.1016/j.microrel.2022.114744
State	Published - Nov 2022

Keywords

Low temperature
Metal-oxide-semiconductor filed effect transistor (MOSFET)
Silicon carbide (SiC)
Total ionizing dose effect, Deep space, High temperature

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10.1016/j.microrel.2022.114744

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@article{75176834fd0e4bb8b4bcfb15782c4537,

title = "Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C",

abstract = "The influence of temperature on the total ionizing dose response of silicon carbide (SiC) metal-oxide-semiconductor filed effect transistors (MOSFETs) was experimentally studied by γ-rays irradiation at temperatures ranging from −233 °C to 175 °C. Electrical parameters were investigated with Current-Voltage (I-V) measurements. Results showed that the threshold voltage shifted toward negative post-irradiation due to the radiation-induced oxide trapped charges. The shift of threshold voltage was a function of irradiation temperature. The shift of threshold voltage increased as temperature decreased. The reason was that there were less annealing for the radiation-induced oxide trapped charges at low temperatures.",

keywords = "Low temperature, Metal-oxide-semiconductor filed effect transistor (MOSFET), Silicon carbide (SiC), Total ionizing dose effect, Deep space, High temperature",

author = "Qingkui Yu and Shuang Cao and He Lv and Yi Sun and Rigen Mo and Qianyuan Wang and Bo Mei and Hongwei Zhang and Chaoming Liu and Xuefeng Yu",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = nov,

doi = "10.1016/j.microrel.2022.114744",

language = "英语",

volume = "138",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C

AU - Yu, Qingkui

AU - Cao, Shuang

AU - Lv, He

AU - Sun, Yi

AU - Mo, Rigen

AU - Wang, Qianyuan

AU - Mei, Bo

AU - Zhang, Hongwei

AU - Liu, Chaoming

AU - Yu, Xuefeng

PY - 2022/11

Y1 - 2022/11

N2 - The influence of temperature on the total ionizing dose response of silicon carbide (SiC) metal-oxide-semiconductor filed effect transistors (MOSFETs) was experimentally studied by γ-rays irradiation at temperatures ranging from −233 °C to 175 °C. Electrical parameters were investigated with Current-Voltage (I-V) measurements. Results showed that the threshold voltage shifted toward negative post-irradiation due to the radiation-induced oxide trapped charges. The shift of threshold voltage was a function of irradiation temperature. The shift of threshold voltage increased as temperature decreased. The reason was that there were less annealing for the radiation-induced oxide trapped charges at low temperatures.

AB - The influence of temperature on the total ionizing dose response of silicon carbide (SiC) metal-oxide-semiconductor filed effect transistors (MOSFETs) was experimentally studied by γ-rays irradiation at temperatures ranging from −233 °C to 175 °C. Electrical parameters were investigated with Current-Voltage (I-V) measurements. Results showed that the threshold voltage shifted toward negative post-irradiation due to the radiation-induced oxide trapped charges. The shift of threshold voltage was a function of irradiation temperature. The shift of threshold voltage increased as temperature decreased. The reason was that there were less annealing for the radiation-induced oxide trapped charges at low temperatures.

KW - Low temperature

KW - Metal-oxide-semiconductor filed effect transistor (MOSFET)

KW - Silicon carbide (SiC)

KW - Total ionizing dose effect, Deep space, High temperature

UR - https://www.scopus.com/pages/publications/85140955119

U2 - 10.1016/j.microrel.2022.114744

DO - 10.1016/j.microrel.2022.114744

M3 - 文章

AN - SCOPUS:85140955119

SN - 0026-2714

VL - 138

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 114744

ER -

Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C

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