Experimental optimization of annular polishing parameters for silicon carbide

Yuan Liu; La Han; Haiying Liu; Yikai Shi; Junjie Zhang

doi:10.1155/2018/9019848

Experimental optimization of annular polishing parameters for silicon carbide

Yuan Liu
, La Han
, Haiying Liu
, Yikai Shi
, Junjie Zhang^*

^*Corresponding author for this work

School of Mechatronics Engineering

School of Astronautics, Harbin Institute of Technology
Harbin Institute of Technology
Xiaguang Optical Electron Co., Ltd
National University of Defense Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Machined surface quality has a strong impact on the functionality of silicon carbide-based components and devices. In the present work, we first analytically investigate the complex coupling of motions in annular polishing based on the Preston equation, which derives the influential parameters for material removal. Subsequently, we conduct systematic annular polishing experiments of reaction-bonded silicon carbide to investigate the influence of derived parameters on polished surface quality, which yield optimized polishing parameters for achieving ultralow surface roughness of reaction-bonded silicon carbide.

Original language	English
Article number	9019848
Journal	Advances in Materials Science and Engineering
Volume	2018
DOIs	https://doi.org/10.1155/2018/9019848
State	Published - 2018

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@article{206adc51f7a141a7ada7f0937c776a17,

title = "Experimental optimization of annular polishing parameters for silicon carbide",

abstract = "Machined surface quality has a strong impact on the functionality of silicon carbide-based components and devices. In the present work, we first analytically investigate the complex coupling of motions in annular polishing based on the Preston equation, which derives the influential parameters for material removal. Subsequently, we conduct systematic annular polishing experiments of reaction-bonded silicon carbide to investigate the influence of derived parameters on polished surface quality, which yield optimized polishing parameters for achieving ultralow surface roughness of reaction-bonded silicon carbide.",

author = "Yuan Liu and La Han and Haiying Liu and Yikai Shi and Junjie Zhang",

note = "Publisher Copyright: {\textcopyright} 2018 Yuan Liu et al.",

year = "2018",

doi = "10.1155/2018/9019848",

language = "英语",

volume = "2018",

journal = "Advances in Materials Science and Engineering",

issn = "1687-8434",

publisher = "John Wiley and Sons Ltd",

}

TY - JOUR

T1 - Experimental optimization of annular polishing parameters for silicon carbide

AU - Liu, Yuan

AU - Han, La

AU - Liu, Haiying

AU - Shi, Yikai

AU - Zhang, Junjie

PY - 2018

Y1 - 2018

N2 - Machined surface quality has a strong impact on the functionality of silicon carbide-based components and devices. In the present work, we first analytically investigate the complex coupling of motions in annular polishing based on the Preston equation, which derives the influential parameters for material removal. Subsequently, we conduct systematic annular polishing experiments of reaction-bonded silicon carbide to investigate the influence of derived parameters on polished surface quality, which yield optimized polishing parameters for achieving ultralow surface roughness of reaction-bonded silicon carbide.

AB - Machined surface quality has a strong impact on the functionality of silicon carbide-based components and devices. In the present work, we first analytically investigate the complex coupling of motions in annular polishing based on the Preston equation, which derives the influential parameters for material removal. Subsequently, we conduct systematic annular polishing experiments of reaction-bonded silicon carbide to investigate the influence of derived parameters on polished surface quality, which yield optimized polishing parameters for achieving ultralow surface roughness of reaction-bonded silicon carbide.

UR - https://www.scopus.com/pages/publications/85056532956

U2 - 10.1155/2018/9019848

DO - 10.1155/2018/9019848

M3 - 文章

AN - SCOPUS:85056532956

SN - 1687-8434

VL - 2018

JO - Advances in Materials Science and Engineering

JF - Advances in Materials Science and Engineering

M1 - 9019848

ER -

Experimental optimization of annular polishing parameters for silicon carbide

Abstract

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