Experimental Evidence of the Effect of Ionizing Radiation on the Space Charge Region in BJTs

Kai Wang; Jianqun Yang; Zhengfeng Bai; Xingji Li

doi:10.1049/ell2.70312

Experimental Evidence of the Effect of Ionizing Radiation on the Space Charge Region in BJTs

Kai Wang
, Jianqun Yang
, Zhengfeng Bai
, Xingji Li^*

^*Corresponding author for this work

School of Ocean Engineering

School of Astronautics, Harbin Institute of Technology
Technology Innovation Center of Materials and Devices at Extreme Environment
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

This study investigates the interplay between ionizing radiation-induced interface traps and displacement defects in NPN bipolar junction transistors (BJTs) containing high-density Au defects. Through ⁶⁰Co γ-ray irradiation experiments and technology computer-aided design (TCAD) simulations, we demonstrate that positively charged interface traps induce a spatial redistribution of the space charge region (SCR), contracting the SCR in the N-type collector while expanding it into the P-type base. Deep-level transient spectroscopy (DLTS) reveals a 40% reduction in Au defect concentration (from 1.09 × 10¹⁴ cm⁻³ to 6.55 × 10¹³ cm⁻³) post-irradiation, corroborated by simulated electron concentration profiles. These findings provide direct experimental evidence of ionizing radiation's impact on SCR modulation, critical for radiation-hardened device design.

Original language	English
Article number	e70312
Journal	Electronics Letters
Volume	61
Issue number	1
DOIs	https://doi.org/10.1049/ell2.70312
State	Published - 1 Jan 2025

Keywords

bipolar transistors
deep level transient spectroscopy
interface states
ionisation

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10.1049/ell2.70312

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title = "Experimental Evidence of the Effect of Ionizing Radiation on the Space Charge Region in BJTs",

abstract = "This study investigates the interplay between ionizing radiation-induced interface traps and displacement defects in NPN bipolar junction transistors (BJTs) containing high-density Au defects. Through 60Co γ-ray irradiation experiments and technology computer-aided design (TCAD) simulations, we demonstrate that positively charged interface traps induce a spatial redistribution of the space charge region (SCR), contracting the SCR in the N-type collector while expanding it into the P-type base. Deep-level transient spectroscopy (DLTS) reveals a 40\% reduction in Au defect concentration (from 1.09 × 1014 cm−3 to 6.55 × 1013 cm−3) post-irradiation, corroborated by simulated electron concentration profiles. These findings provide direct experimental evidence of ionizing radiation's impact on SCR modulation, critical for radiation-hardened device design.",

keywords = "bipolar transistors, deep level transient spectroscopy, interface states, ionisation",

author = "Kai Wang and Jianqun Yang and Zhengfeng Bai and Xingji Li",

note = "Publisher Copyright: {\textcopyright} 2025 The Author(s). Electronics Letters published by John Wiley \& Sons Ltd on behalf of The Institution of Engineering and Technology.",

year = "2025",

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doi = "10.1049/ell2.70312",

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T1 - Experimental Evidence of the Effect of Ionizing Radiation on the Space Charge Region in BJTs

AU - Wang, Kai

AU - Yang, Jianqun

AU - Bai, Zhengfeng

AU - Li, Xingji

PY - 2025/1/1

Y1 - 2025/1/1

N2 - This study investigates the interplay between ionizing radiation-induced interface traps and displacement defects in NPN bipolar junction transistors (BJTs) containing high-density Au defects. Through 60Co γ-ray irradiation experiments and technology computer-aided design (TCAD) simulations, we demonstrate that positively charged interface traps induce a spatial redistribution of the space charge region (SCR), contracting the SCR in the N-type collector while expanding it into the P-type base. Deep-level transient spectroscopy (DLTS) reveals a 40% reduction in Au defect concentration (from 1.09 × 1014 cm−3 to 6.55 × 1013 cm−3) post-irradiation, corroborated by simulated electron concentration profiles. These findings provide direct experimental evidence of ionizing radiation's impact on SCR modulation, critical for radiation-hardened device design.

AB - This study investigates the interplay between ionizing radiation-induced interface traps and displacement defects in NPN bipolar junction transistors (BJTs) containing high-density Au defects. Through 60Co γ-ray irradiation experiments and technology computer-aided design (TCAD) simulations, we demonstrate that positively charged interface traps induce a spatial redistribution of the space charge region (SCR), contracting the SCR in the N-type collector while expanding it into the P-type base. Deep-level transient spectroscopy (DLTS) reveals a 40% reduction in Au defect concentration (from 1.09 × 1014 cm−3 to 6.55 × 1013 cm−3) post-irradiation, corroborated by simulated electron concentration profiles. These findings provide direct experimental evidence of ionizing radiation's impact on SCR modulation, critical for radiation-hardened device design.

KW - bipolar transistors

KW - deep level transient spectroscopy

KW - interface states

KW - ionisation

UR - https://www.scopus.com/pages/publications/105008272964

U2 - 10.1049/ell2.70312

DO - 10.1049/ell2.70312

M3 - 文章

AN - SCOPUS:105008272964

SN - 0013-5194

VL - 61

JO - Electronics Letters

JF - Electronics Letters

IS - 1

M1 - e70312

ER -

Experimental Evidence of the Effect of Ionizing Radiation on the Space Charge Region in BJTs

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