Evidences of VO, VZn, and Oi defects as the green luminescence origins in ZnO

Jinpeng Lv; Chundong Li

doi:10.1063/1.4844735

Evidences of V_O, V_Zn, and O_i defects as the green luminescence origins in ZnO

Jinpeng Lv^*
, Chundong Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

In this Letter, by employing a combination of typical treatments and sensitive defect characterization, we discriminate between the roles of different kinds of intrinsic defects in ZnO. Thereby, we offer convincing experimental evidence that the green luminescence can originate from V _O, V_Zn, and O_i-related defects, corresponding to the 2.48 eV, 2.35 eV, and 2.26 eV emissions, respectively. The green emission peaks are found to be dependent on the relative concentration of these defect centers.

Original language	English
Article number	232114
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4844735
State	Published - 2 Dec 2013
Externally published	Yes

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title = "Evidences of VO, VZn, and Oi defects as the green luminescence origins in ZnO",

abstract = "In this Letter, by employing a combination of typical treatments and sensitive defect characterization, we discriminate between the roles of different kinds of intrinsic defects in ZnO. Thereby, we offer convincing experimental evidence that the green luminescence can originate from V O, VZn, and Oi-related defects, corresponding to the 2.48 eV, 2.35 eV, and 2.26 eV emissions, respectively. The green emission peaks are found to be dependent on the relative concentration of these defect centers.",

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AU - Lv, Jinpeng

AU - Li, Chundong

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N2 - In this Letter, by employing a combination of typical treatments and sensitive defect characterization, we discriminate between the roles of different kinds of intrinsic defects in ZnO. Thereby, we offer convincing experimental evidence that the green luminescence can originate from V O, VZn, and Oi-related defects, corresponding to the 2.48 eV, 2.35 eV, and 2.26 eV emissions, respectively. The green emission peaks are found to be dependent on the relative concentration of these defect centers.

AB - In this Letter, by employing a combination of typical treatments and sensitive defect characterization, we discriminate between the roles of different kinds of intrinsic defects in ZnO. Thereby, we offer convincing experimental evidence that the green luminescence can originate from V O, VZn, and Oi-related defects, corresponding to the 2.48 eV, 2.35 eV, and 2.26 eV emissions, respectively. The green emission peaks are found to be dependent on the relative concentration of these defect centers.

UR - https://www.scopus.com/pages/publications/84889856157

U2 - 10.1063/1.4844735

DO - 10.1063/1.4844735

M3 - 文章

AN - SCOPUS:84889856157

SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Evidences of V_O, V_Zn, and O_i defects as the green luminescence origins in ZnO

Abstract

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