Evidence of polarization switching induced by magnetic field in BiFeO 3 thin film

J. N. Wang; W. L. Li; X. L. Li; W. D. Fei

doi:10.1142/S0217984913500772

Evidence of polarization switching induced by magnetic field in BiFeO ₃ thin film

J. N. Wang
, W. L. Li
, X. L. Li
, W. D. Fei^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A BiFeO₃ thin film was prepared on the (111) Pt/Ti/SiO ₂/Si substrate by the solution coating method. In order to detect the effect of an external magnetic field on the BiFeO₃ thin film, a fine scan X-ray diffraction with a scan ratio of 0.002°/s was carried out under the magnetic field parallel to the film surface. The result of the in situ analysis of X-ray diffraction for the thin film in the magnetic field indicates that the magnetic field leads to an increase of the integral intensity ratio of I{(110)}/I{(\overline 110)} compared with that under no magnetic field. The increase of I{(110)}/I{(\overline 110)} implies a domain switching under the magnetic field, where the domain switching comes from the decreasing residual tensile stress induced by the magnetostriction of BiFeO₃ in the magnetic field.

Original language	English
Article number	1350077
Journal	Modern Physics Letters B
Volume	27
Issue number	11
DOIs	https://doi.org/10.1142/S0217984913500772
State	Published - 10 May 2013
Externally published	Yes

Keywords

Domain switching
in situ X-ray diffraction
magnetostriction
residual stress

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10.1142/S0217984913500772

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title = "Evidence of polarization switching induced by magnetic field in BiFeO 3 thin film",

abstract = "A BiFeO3 thin film was prepared on the (111) Pt/Ti/SiO 2/Si substrate by the solution coating method. In order to detect the effect of an external magnetic field on the BiFeO3 thin film, a fine scan X-ray diffraction with a scan ratio of 0.002°/s was carried out under the magnetic field parallel to the film surface. The result of the in situ analysis of X-ray diffraction for the thin film in the magnetic field indicates that the magnetic field leads to an increase of the integral intensity ratio of I\{(110)\}/I\{(\textbackslash{}overline 110)\} compared with that under no magnetic field. The increase of I\{(110)\}/I\{(\textbackslash{}overline 110)\} implies a domain switching under the magnetic field, where the domain switching comes from the decreasing residual tensile stress induced by the magnetostriction of BiFeO3 in the magnetic field.",

keywords = "Domain switching, in situ X-ray diffraction, magnetostriction, residual stress",

author = "Wang, \{J. N.\} and Li, \{W. L.\} and Li, \{X. L.\} and Fei, \{W. D.\}",

year = "2013",

month = may,

day = "10",

doi = "10.1142/S0217984913500772",

language = "英语",

volume = "27",

journal = "Modern Physics Letters B",

issn = "0217-9849",

publisher = "World Scientific",

number = "11",

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TY - JOUR

T1 - Evidence of polarization switching induced by magnetic field in BiFeO 3 thin film

AU - Wang, J. N.

AU - Li, W. L.

AU - Li, X. L.

AU - Fei, W. D.

PY - 2013/5/10

Y1 - 2013/5/10

N2 - A BiFeO3 thin film was prepared on the (111) Pt/Ti/SiO 2/Si substrate by the solution coating method. In order to detect the effect of an external magnetic field on the BiFeO3 thin film, a fine scan X-ray diffraction with a scan ratio of 0.002°/s was carried out under the magnetic field parallel to the film surface. The result of the in situ analysis of X-ray diffraction for the thin film in the magnetic field indicates that the magnetic field leads to an increase of the integral intensity ratio of I{(110)}/I{(\overline 110)} compared with that under no magnetic field. The increase of I{(110)}/I{(\overline 110)} implies a domain switching under the magnetic field, where the domain switching comes from the decreasing residual tensile stress induced by the magnetostriction of BiFeO3 in the magnetic field.

AB - A BiFeO3 thin film was prepared on the (111) Pt/Ti/SiO 2/Si substrate by the solution coating method. In order to detect the effect of an external magnetic field on the BiFeO3 thin film, a fine scan X-ray diffraction with a scan ratio of 0.002°/s was carried out under the magnetic field parallel to the film surface. The result of the in situ analysis of X-ray diffraction for the thin film in the magnetic field indicates that the magnetic field leads to an increase of the integral intensity ratio of I{(110)}/I{(\overline 110)} compared with that under no magnetic field. The increase of I{(110)}/I{(\overline 110)} implies a domain switching under the magnetic field, where the domain switching comes from the decreasing residual tensile stress induced by the magnetostriction of BiFeO3 in the magnetic field.

KW - Domain switching

KW - in situ X-ray diffraction

KW - magnetostriction

KW - residual stress

UR - https://www.scopus.com/pages/publications/84876273755

U2 - 10.1142/S0217984913500772

DO - 10.1142/S0217984913500772

M3 - 文章

AN - SCOPUS:84876273755

SN - 0217-9849

VL - 27

JO - Modern Physics Letters B

JF - Modern Physics Letters B

IS - 11

M1 - 1350077

ER -

Evidence of polarization switching induced by magnetic field in BiFeO ₃ thin film

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Keywords

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