Estimations of Low Temperature Dislocation Mobility in GaN

Valeri I. Orlov; Pavel S. Vergeles; Eugene B. Yakimov; Xingji Li; Jianqun Yang; Gang Lv; Shangli Dong

doi:10.1002/pssa.201900163

Estimations of Low Temperature Dislocation Mobility in GaN

Valeri I. Orlov
, Pavel S. Vergeles
, Eugene B. Yakimov^*
, Xingji Li
, Jianqun Yang
, Gang Lv
, Shangli Dong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature dependence are estimated. It is shown that the activation energy of dislocation movement at temperatures lower than 773 K does not exceed 1 eV.

Original language	English
Article number	1900163
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	17
DOIs	https://doi.org/10.1002/pssa.201900163
State	Published - 1 Sep 2019
Externally published	Yes

Keywords

GaN
activation energy
dislocation mobility
indentation

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10.1002/pssa.201900163

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title = "Estimations of Low Temperature Dislocation Mobility in GaN",

abstract = "The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature dependence are estimated. It is shown that the activation energy of dislocation movement at temperatures lower than 773 K does not exceed 1 eV.",

keywords = "GaN, activation energy, dislocation mobility, indentation",

author = "Orlov, \{Valeri I.\} and Vergeles, \{Pavel S.\} and Yakimov, \{Eugene B.\} and Xingji Li and Jianqun Yang and Gang Lv and Shangli Dong",

note = "Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2019",

month = sep,

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doi = "10.1002/pssa.201900163",

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T1 - Estimations of Low Temperature Dislocation Mobility in GaN

AU - Orlov, Valeri I.

AU - Vergeles, Pavel S.

AU - Yakimov, Eugene B.

AU - Li, Xingji

AU - Yang, Jianqun

AU - Lv, Gang

AU - Dong, Shangli

PY - 2019/9/1

Y1 - 2019/9/1

N2 - The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature dependence are estimated. It is shown that the activation energy of dislocation movement at temperatures lower than 773 K does not exceed 1 eV.

AB - The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature dependence are estimated. It is shown that the activation energy of dislocation movement at temperatures lower than 773 K does not exceed 1 eV.

KW - GaN

KW - activation energy

KW - dislocation mobility

KW - indentation

UR - https://www.scopus.com/pages/publications/85073028436

U2 - 10.1002/pssa.201900163

DO - 10.1002/pssa.201900163

M3 - 文章

AN - SCOPUS:85073028436

SN - 1862-6300

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 17

M1 - 1900163

ER -

Estimations of Low Temperature Dislocation Mobility in GaN

Abstract

Keywords

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