Enhancement of the HFCVD diamond growth process by directed gas flow

Jie Yu; Rongfang Huang; Lishi Wen; Changxu Shi

doi:10.1016/S0167-577X(97)00020-7

Enhancement of the HFCVD diamond growth process by directed gas flow

Jie Yu^*
, Rongfang Huang
, Lishi Wen
, Changxu Shi

^*Corresponding author for this work

CAS - Institute of Metal Research

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The effect of gas flow rate on the growth rate of hot-filament CVD diamond is reported. With increasing gas flow rate, the growth rate of the HFCVD diamond film increases. The crux of increasing the growth rate of the HFCVD diamond film is to increase the mass flow passing through the filamentary heater region and to increase the quantity of reactive gas mixture reaching the substrate surface per unit time. Eventually the growth rate of 8.67 μm/h was obtained at the gas flow rate of 800 sccm.

Original language	English
Pages (from-to)	143-146
Number of pages	4
Journal	Materials Letters
Volume	32
Issue number	2-3
DOIs	https://doi.org/10.1016/S0167-577X(97)00020-7
State	Published - Aug 1997
Externally published	Yes

Keywords

Active species
Diamond
Gas flow rate
Growth rate
HFCVD

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10.1016/S0167-577X(97)00020-7

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title = "Enhancement of the HFCVD diamond growth process by directed gas flow",

abstract = "The effect of gas flow rate on the growth rate of hot-filament CVD diamond is reported. With increasing gas flow rate, the growth rate of the HFCVD diamond film increases. The crux of increasing the growth rate of the HFCVD diamond film is to increase the mass flow passing through the filamentary heater region and to increase the quantity of reactive gas mixture reaching the substrate surface per unit time. Eventually the growth rate of 8.67 μm/h was obtained at the gas flow rate of 800 sccm.",

keywords = "Active species, Diamond, Gas flow rate, Growth rate, HFCVD",

author = "Jie Yu and Rongfang Huang and Lishi Wen and Changxu Shi",

year = "1997",

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doi = "10.1016/S0167-577X(97)00020-7",

language = "英语",

volume = "32",

pages = "143--146",

journal = "Materials Letters",

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T1 - Enhancement of the HFCVD diamond growth process by directed gas flow

AU - Yu, Jie

AU - Huang, Rongfang

AU - Wen, Lishi

AU - Shi, Changxu

PY - 1997/8

Y1 - 1997/8

N2 - The effect of gas flow rate on the growth rate of hot-filament CVD diamond is reported. With increasing gas flow rate, the growth rate of the HFCVD diamond film increases. The crux of increasing the growth rate of the HFCVD diamond film is to increase the mass flow passing through the filamentary heater region and to increase the quantity of reactive gas mixture reaching the substrate surface per unit time. Eventually the growth rate of 8.67 μm/h was obtained at the gas flow rate of 800 sccm.

AB - The effect of gas flow rate on the growth rate of hot-filament CVD diamond is reported. With increasing gas flow rate, the growth rate of the HFCVD diamond film increases. The crux of increasing the growth rate of the HFCVD diamond film is to increase the mass flow passing through the filamentary heater region and to increase the quantity of reactive gas mixture reaching the substrate surface per unit time. Eventually the growth rate of 8.67 μm/h was obtained at the gas flow rate of 800 sccm.

KW - Active species

KW - Diamond

KW - Gas flow rate

KW - Growth rate

KW - HFCVD

UR - https://www.scopus.com/pages/publications/0031210638

U2 - 10.1016/S0167-577X(97)00020-7

DO - 10.1016/S0167-577X(97)00020-7

M3 - 文章

AN - SCOPUS:0031210638

SN - 0167-577X

VL - 32

SP - 143

EP - 146

JO - Materials Letters

JF - Materials Letters

IS - 2-3

ER -

Enhancement of the HFCVD diamond growth process by directed gas flow

Abstract

Keywords

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