Enhancement of discharge and deposition rate by imposed pulse current during the cathodic arc deposition of ta-C films

Jian Hu; Xiubo Tian; Hongye Liu; Chunzhi Gong; Benfu Wang

doi:10.1016/j.vacuum.2021.110515

Enhancement of discharge and deposition rate by imposed pulse current during the cathodic arc deposition of ta-C films

Jian Hu
, Xiubo Tian^*
, Hongye Liu
, Chunzhi Gong
, Benfu Wang

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
Shenzhen Jinzhou Precision Technology Corp.
CRRC Corporation Limited

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The deposition rate of ta-C films was increased by imposed pulse cathodic arc deposition (IP-CAD). The arc discharge behavior, deposition rate and micro-hardness of the ta-C films were investigated at average arc currents (I_average) ranging from 60 A to 100 A. The average substrate current density of IP-CAD was higher than that of DC-CAD at the same I_average. The optical emission spectra demonstrated that a dramatic increase in the evaporation rate of both carbon atoms and ions were achieved by imposing high pulsed current with I_average of 80 A. As the I_Average increased from 60 A to 100 A, the deposition rate increased by about 110% for the IP-CAD and by 33% for DC-CAD. This might be attributed to the cooperative actions of high evaporation rate of the carbon, large arc pressure near the arc spots and the focusing effect induce by high current. As compared to DC-CAD, the IP-CAD mode led to smaller concentration of sp³ (44%) than DC-CAD (59%) at the I_Average of 80 A. However, the IP-CAD ta-C films exhibited higher micro-hardness (~44.7 GPa) than that of DC-CAD (24 GPa). A preferable toughness was simultaneously obtained for IP-CAD.

Original language	English
Article number	110515
Journal	Vacuum
Volume	193
DOIs	https://doi.org/10.1016/j.vacuum.2021.110515
State	Published - Nov 2021

Keywords

Average arc current
Deposition rate
Imposed pulse cathodic arc deposition
Micro-hardness
Ta-C films

Access to Document

10.1016/j.vacuum.2021.110515

Cite this

@article{95f29ef59fea4d58b41825608466426e,

title = "Enhancement of discharge and deposition rate by imposed pulse current during the cathodic arc deposition of ta-C films",

abstract = "The deposition rate of ta-C films was increased by imposed pulse cathodic arc deposition (IP-CAD). The arc discharge behavior, deposition rate and micro-hardness of the ta-C films were investigated at average arc currents (Iaverage) ranging from 60 A to 100 A. The average substrate current density of IP-CAD was higher than that of DC-CAD at the same Iaverage. The optical emission spectra demonstrated that a dramatic increase in the evaporation rate of both carbon atoms and ions were achieved by imposing high pulsed current with Iaverage of 80 A. As the IAverage increased from 60 A to 100 A, the deposition rate increased by about 110\% for the IP-CAD and by 33\% for DC-CAD. This might be attributed to the cooperative actions of high evaporation rate of the carbon, large arc pressure near the arc spots and the focusing effect induce by high current. As compared to DC-CAD, the IP-CAD mode led to smaller concentration of sp3 (44\%) than DC-CAD (59\%) at the IAverage of 80 A. However, the IP-CAD ta-C films exhibited higher micro-hardness (\textasciitilde{}44.7 GPa) than that of DC-CAD (24 GPa). A preferable toughness was simultaneously obtained for IP-CAD.",

keywords = "Average arc current, Deposition rate, Imposed pulse cathodic arc deposition, Micro-hardness, Ta-C films",

author = "Jian Hu and Xiubo Tian and Hongye Liu and Chunzhi Gong and Benfu Wang",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd",

year = "2021",

month = nov,

doi = "10.1016/j.vacuum.2021.110515",

language = "英语",

volume = "193",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Enhancement of discharge and deposition rate by imposed pulse current during the cathodic arc deposition of ta-C films

AU - Hu, Jian

AU - Tian, Xiubo

AU - Liu, Hongye

AU - Gong, Chunzhi

AU - Wang, Benfu

PY - 2021/11

Y1 - 2021/11

N2 - The deposition rate of ta-C films was increased by imposed pulse cathodic arc deposition (IP-CAD). The arc discharge behavior, deposition rate and micro-hardness of the ta-C films were investigated at average arc currents (Iaverage) ranging from 60 A to 100 A. The average substrate current density of IP-CAD was higher than that of DC-CAD at the same Iaverage. The optical emission spectra demonstrated that a dramatic increase in the evaporation rate of both carbon atoms and ions were achieved by imposing high pulsed current with Iaverage of 80 A. As the IAverage increased from 60 A to 100 A, the deposition rate increased by about 110% for the IP-CAD and by 33% for DC-CAD. This might be attributed to the cooperative actions of high evaporation rate of the carbon, large arc pressure near the arc spots and the focusing effect induce by high current. As compared to DC-CAD, the IP-CAD mode led to smaller concentration of sp3 (44%) than DC-CAD (59%) at the IAverage of 80 A. However, the IP-CAD ta-C films exhibited higher micro-hardness (~44.7 GPa) than that of DC-CAD (24 GPa). A preferable toughness was simultaneously obtained for IP-CAD.

AB - The deposition rate of ta-C films was increased by imposed pulse cathodic arc deposition (IP-CAD). The arc discharge behavior, deposition rate and micro-hardness of the ta-C films were investigated at average arc currents (Iaverage) ranging from 60 A to 100 A. The average substrate current density of IP-CAD was higher than that of DC-CAD at the same Iaverage. The optical emission spectra demonstrated that a dramatic increase in the evaporation rate of both carbon atoms and ions were achieved by imposing high pulsed current with Iaverage of 80 A. As the IAverage increased from 60 A to 100 A, the deposition rate increased by about 110% for the IP-CAD and by 33% for DC-CAD. This might be attributed to the cooperative actions of high evaporation rate of the carbon, large arc pressure near the arc spots and the focusing effect induce by high current. As compared to DC-CAD, the IP-CAD mode led to smaller concentration of sp3 (44%) than DC-CAD (59%) at the IAverage of 80 A. However, the IP-CAD ta-C films exhibited higher micro-hardness (~44.7 GPa) than that of DC-CAD (24 GPa). A preferable toughness was simultaneously obtained for IP-CAD.

KW - Average arc current

KW - Deposition rate

KW - Imposed pulse cathodic arc deposition

KW - Micro-hardness

KW - Ta-C films

UR - https://www.scopus.com/pages/publications/85112688404

U2 - 10.1016/j.vacuum.2021.110515

DO - 10.1016/j.vacuum.2021.110515

M3 - 文章

AN - SCOPUS:85112688404

SN - 0042-207X

VL - 193

JO - Vacuum

JF - Vacuum

M1 - 110515

ER -

Enhancement of discharge and deposition rate by imposed pulse current during the cathodic arc deposition of ta-C films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this