Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study

Boyuan Chi; Leina Jiang; Yu Zhu; Lingling Tao; Xiufeng Han

doi:10.1063/5.0159999

Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study

Boyuan Chi
, Leina Jiang
, Yu Zhu
, Lingling Tao
, Xiufeng Han^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The tunneling electroresistance (TER) ratio is an important device merit of ferroelectric tunnel junction (FTJ) and multiferroic tunnel junction (MFTJ) devices. Here, through first-principles calculations, we propose an efficient way to achieve a sizable TER effect through the interface engineering in both SrRuO₃/PbTiO₃/FeO/Fe and SrRuO₃/PbTiO₃/CoO/Co MFTJs. It is found that the interfacial FeO or CoO layer can significantly modify the band alignment between PbTiO₃ barrier and electrodes through its large depolarization field, causing the insulating-metallic transition of PbTiO₃ barrier upon polarization reversal. As a result, the tunneling resistance changes significantly, leading to a giant TER effect of 10⁵%. Our results suggest a practical way to enhance the TER effect in MFTJs.

Original language	English
Article number	053501
Journal	Applied Physics Letters
Volume	123
Issue number	5
DOIs	https://doi.org/10.1063/5.0159999
State	Published - 31 Jul 2023
Externally published	Yes

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title = "Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study",

abstract = "The tunneling electroresistance (TER) ratio is an important device merit of ferroelectric tunnel junction (FTJ) and multiferroic tunnel junction (MFTJ) devices. Here, through first-principles calculations, we propose an efficient way to achieve a sizable TER effect through the interface engineering in both SrRuO3/PbTiO3/FeO/Fe and SrRuO3/PbTiO3/CoO/Co MFTJs. It is found that the interfacial FeO or CoO layer can significantly modify the band alignment between PbTiO3 barrier and electrodes through its large depolarization field, causing the insulating-metallic transition of PbTiO3 barrier upon polarization reversal. As a result, the tunneling resistance changes significantly, leading to a giant TER effect of 105\%. Our results suggest a practical way to enhance the TER effect in MFTJs.",

author = "Boyuan Chi and Leina Jiang and Yu Zhu and Lingling Tao and Xiufeng Han",

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year = "2023",

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day = "31",

doi = "10.1063/5.0159999",

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volume = "123",

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TY - JOUR

T1 - Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition

T2 - A first-principles study

AU - Chi, Boyuan

AU - Jiang, Leina

AU - Zhu, Yu

AU - Tao, Lingling

AU - Han, Xiufeng

PY - 2023/7/31

Y1 - 2023/7/31

N2 - The tunneling electroresistance (TER) ratio is an important device merit of ferroelectric tunnel junction (FTJ) and multiferroic tunnel junction (MFTJ) devices. Here, through first-principles calculations, we propose an efficient way to achieve a sizable TER effect through the interface engineering in both SrRuO3/PbTiO3/FeO/Fe and SrRuO3/PbTiO3/CoO/Co MFTJs. It is found that the interfacial FeO or CoO layer can significantly modify the band alignment between PbTiO3 barrier and electrodes through its large depolarization field, causing the insulating-metallic transition of PbTiO3 barrier upon polarization reversal. As a result, the tunneling resistance changes significantly, leading to a giant TER effect of 105%. Our results suggest a practical way to enhance the TER effect in MFTJs.

AB - The tunneling electroresistance (TER) ratio is an important device merit of ferroelectric tunnel junction (FTJ) and multiferroic tunnel junction (MFTJ) devices. Here, through first-principles calculations, we propose an efficient way to achieve a sizable TER effect through the interface engineering in both SrRuO3/PbTiO3/FeO/Fe and SrRuO3/PbTiO3/CoO/Co MFTJs. It is found that the interfacial FeO or CoO layer can significantly modify the band alignment between PbTiO3 barrier and electrodes through its large depolarization field, causing the insulating-metallic transition of PbTiO3 barrier upon polarization reversal. As a result, the tunneling resistance changes significantly, leading to a giant TER effect of 105%. Our results suggest a practical way to enhance the TER effect in MFTJs.

UR - https://www.scopus.com/pages/publications/85166927212

U2 - 10.1063/5.0159999

DO - 10.1063/5.0159999

M3 - 文章

AN - SCOPUS:85166927212

SN - 0003-6951

VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053501

ER -

Enhanced tunneling electroresistance in multiferroic tunnel junctions through the barrier insulating-metallic transition: A first-principles study

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