Abstract
GeTe-based materials are promising for medium-temperature energy conversion, but its practical use is limited by the phase transition, which deteriorates both thermoelectric performance and mechanical stability. This work introduces a novel doping strategy to stabilize the GeTe lattice structure and enhance thermoelectric efficiency. Yb doping enhances the band degeneracy at the valence band maximum, which in turn increases the effective mass of holes, ultimately leading to an elevated Seebeck coefficient. The combination of Yb-Bi co-doping and rapid solidification process is concluded to be of two main functions: (i) increasing the homogeneity of Yb in GeTe matrix, and (ii) facilitating the formation of nano-sized Yb-rich secondary phases. The resulting defect structure, characterized by refined grains, nanoprecipitates, domain boundary and dense dislocation networks, intensifies phonon scattering. As a result, a decoupling of thermoelectric parameters was achieved in Yb0.010Bi0.07Ge0.9Te—with increased power factor and decreased thermal conductivity, below 623K. Finally, compared with Bi monodoping sample, a 16 % enhancement of ZTave (323–623K) was obtained in Yb0.005Bi0.07Ge0.9Te and Yb0.010Bi0.07Ge0.9Te. The results demonstrate the benefits of dilute Yb doping in Bi0.07Ge0.9Te, which is ideal for advanced sustainable energy applications.
| Original language | English |
|---|---|
| Article number | 101853 |
| Journal | Materials Today Physics |
| Volume | 58 |
| DOIs | |
| State | Published - Oct 2025 |
Keywords
- Germanium telluride
- Nanostructures
- Rapid solidification
- Sustainable application
- Yb-Bi co-doping
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