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Enhanced piezoresponse and dielectric properties for Ba1-xSrxTiO3 composition ultrathin films by the high-throughput method

  • Nana Zhang
  • , Di Wang
  • , Jie Wang
  • , Hong Fang
  • , Bin He*
  • , Jinrui Guo
  • , Yue Han
  • , Peng Zhang
  • , Chaoqun Shi
  • , Yanan Chen
  • , Qixiang Wang
  • , Miaojuan Ren
  • , Weiming Lü*
  • *Corresponding author for this work
  • University of Jinan
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

The stacked single-unit cell Ba1-xSrxTiO3 (BSTO) thin film designed by the high-throughput method is fabricated by layer-by-layer deposition by laser molecular beam epitaxy, and its ferroelectric and dielectric characteristics as a function of Sr concentration are comprehensively investigated. The permittivity of BSTO exhibits a monotonous increase by Sr with a plateau in the region of 14% < Sr < 85%. Meanwhile, at the low Sr doping regime, the piezoelectric response has been discovered, and the maximum piezoresponse and d33 can reach approximately 139.05 pm and 88 pm/V once an appropriate Ba/Sr ratio is formed, exhibiting a coexistence of a dielectric property and giant piezoresponse. This effective piezoelectric constant d33 value is significantly larger than the conventional chemical doping scenarios, suggesting that the intra-plane interaction is crucial for designing future promising dielectric and ferroelectric thin films via high-throughput technologies.

Original languageEnglish
Article number1491
JournalCoatings
Volume11
Issue number12
DOIs
StatePublished - Dec 2021
Externally publishedYes

Keywords

  • BSTO composition ultrathin film
  • Dielectric properties
  • Ferroelectric
  • High throughput

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