Enhanced photoelectric responsivity of bilayer graphene/GaAs photodetector using plasmon resonance grating structures

High-efficiency integrated photodetectors are the core supporting components for the miniaturization of optoelectronic equipment. The design of a grating structure on the surface of bilayer p-graphene/n-GaAs can excite a plasmon mode to enhance the photoelectric performance of photodetectors. Here, we simulate a heterojunction photodetector which is highly sensitive to wavelengths ranging from 550 nm to 850 nm to evaluate the optical and electrical performance of the grating/graphene/GaAs structure. Such a high performance is attributed to the efficient carrier separation and transfer between graphene and GaAs, which is created by the strong electromagnetic field produced at the heterojunction area. The results indicate that through sophisticated design, heterojunctions using plasmon resonance can become potential candidates for various essential electronic and optoelectronic applications.