Enhanced performance of Pb0.8La0.1Ca 0.1Ti0.975O3 /Pb (Nb0.01Zr 0.2Ti0.8)O3 multilayer thin films for pyroelectric applications

Q. G. Chi; X. Wang; W. L. Li; W. D. Fei; Q. Q. Lei

doi:10.1063/1.3600336

Enhanced performance of Pb_0.8La_0.1Ca _0.1Ti_0.975O₃ /Pb (Nb_0.01Zr _0.2Ti_0.8)O₃ multilayer thin films for pyroelectric applications

Q. G. Chi^*
, X. Wang
, W. L. Li
, W. D. Fei
, Q. Q. Lei

^*Corresponding author for this work

Harbin University of Science and Technology
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Taking advantage of the relatively low temperature crystallization and high orientation of thin films of Pb_0.8La_0.1Ca _0.1Ti_0.975O₃ (PLCT), growth of a highly (100)-oriented PLCT/Pb (Nb_0.01Zr_0.2Ti_0.8)O ₃ (PNZT) multilayer film on a Pt/Ti/ SiO₂ /Si substrate is achieved at a temperature as low as 450 °C. The interfacial diffusion in the multilayer film is decreased by the low temperature of crystallization. A relatively low dielectric constant and high pyrocoefficient are simultaneously achieved in the highly (100)-oriented PLCT/PNZT multilayer film. The high figure-of-merit obtained for this multilayer film make it a good candidate for application in pyroelectric thin-film devices.

Original language	English
Article number	242903
Journal	Applied Physics Letters
Volume	98
Issue number	24
DOIs	https://doi.org/10.1063/1.3600336
State	Published - 13 Jun 2011
Externally published	Yes

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title = "Enhanced performance of Pb0.8La0.1Ca 0.1Ti0.975O3 /Pb (Nb0.01Zr 0.2Ti0.8)O3 multilayer thin films for pyroelectric applications",

abstract = "Taking advantage of the relatively low temperature crystallization and high orientation of thin films of Pb0.8La0.1Ca 0.1Ti0.975O3 (PLCT), growth of a highly (100)-oriented PLCT/Pb (Nb0.01Zr0.2Ti0.8)O 3 (PNZT) multilayer film on a Pt/Ti/ SiO2 /Si substrate is achieved at a temperature as low as 450 °C. The interfacial diffusion in the multilayer film is decreased by the low temperature of crystallization. A relatively low dielectric constant and high pyrocoefficient are simultaneously achieved in the highly (100)-oriented PLCT/PNZT multilayer film. The high figure-of-merit obtained for this multilayer film make it a good candidate for application in pyroelectric thin-film devices.",

author = "Chi, \{Q. G.\} and X. Wang and Li, \{W. L.\} and Fei, \{W. D.\} and Lei, \{Q. Q.\}",

year = "2011",

month = jun,

day = "13",

doi = "10.1063/1.3600336",

language = "英语",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Enhanced performance of Pb0.8La0.1Ca 0.1Ti0.975O3 /Pb (Nb0.01Zr 0.2Ti0.8)O3 multilayer thin films for pyroelectric applications

AU - Chi, Q. G.

AU - Wang, X.

AU - Li, W. L.

AU - Fei, W. D.

AU - Lei, Q. Q.

PY - 2011/6/13

Y1 - 2011/6/13

N2 - Taking advantage of the relatively low temperature crystallization and high orientation of thin films of Pb0.8La0.1Ca 0.1Ti0.975O3 (PLCT), growth of a highly (100)-oriented PLCT/Pb (Nb0.01Zr0.2Ti0.8)O 3 (PNZT) multilayer film on a Pt/Ti/ SiO2 /Si substrate is achieved at a temperature as low as 450 °C. The interfacial diffusion in the multilayer film is decreased by the low temperature of crystallization. A relatively low dielectric constant and high pyrocoefficient are simultaneously achieved in the highly (100)-oriented PLCT/PNZT multilayer film. The high figure-of-merit obtained for this multilayer film make it a good candidate for application in pyroelectric thin-film devices.

AB - Taking advantage of the relatively low temperature crystallization and high orientation of thin films of Pb0.8La0.1Ca 0.1Ti0.975O3 (PLCT), growth of a highly (100)-oriented PLCT/Pb (Nb0.01Zr0.2Ti0.8)O 3 (PNZT) multilayer film on a Pt/Ti/ SiO2 /Si substrate is achieved at a temperature as low as 450 °C. The interfacial diffusion in the multilayer film is decreased by the low temperature of crystallization. A relatively low dielectric constant and high pyrocoefficient are simultaneously achieved in the highly (100)-oriented PLCT/PNZT multilayer film. The high figure-of-merit obtained for this multilayer film make it a good candidate for application in pyroelectric thin-film devices.

UR - https://www.scopus.com/pages/publications/79960582852

U2 - 10.1063/1.3600336

DO - 10.1063/1.3600336

M3 - 文章

AN - SCOPUS:79960582852

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242903

ER -

Enhanced performance of Pb_0.8La_0.1Ca _0.1Ti_0.975O₃ /Pb (Nb_0.01Zr _0.2Ti_0.8)O₃ multilayer thin films for pyroelectric applications

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