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Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures

  • Hailin Wang
  • , Haoliang Huang
  • , Yanpeng Feng
  • , Yu Chieh Ku
  • , Cheng En Liu
  • , Shanquan Chen
  • , Alan Farhan
  • , Cinthia Piamonteze
  • , Yalin Lu
  • , Yunlong Tang
  • , Jun Wei
  • , Lang Chen
  • , Chun Fu Chang
  • , Chang Yang Kuo*
  • , Zuhuang Chen*
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • University of Science and Technology of China
  • Southern University of Science and Technology
  • Songshan Lake Materials Laboratory
  • National Yang Ming Chiao Tung University
  • Baylor University
  • Paul Scherrer Institute
  • CAS - Institute of Metal Research
  • Harbin Institute of Technology Shenzhen
  • Max Planck Institute for Chemical Physics of Solids
  • National Synchrotron Radiation Research Center Taiwan

Research output: Contribution to journalArticlepeer-review

Abstract

High-entropy oxides (HEOs) have gained significant interest in recent years due to their unique structural characteristics and potential to tailor functional properties. However, the electronic structure of the HEOs currently remains vastly unknown. In this work, combining magnetometry measurements, scanning transmission electron microscopy, and element-specific X-ray absorption spectroscopy, the electronic structure and magnetic properties of the perovskite-HEO La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 epitaxial thin films are systemically studied. It is found that enhanced magnetic frustration emerges from competing exchange interactions of the five transition-metal cations with energetically favorable half-filled/full-filled electron configurations, resulting in an unprecedented large vertical exchange bias effect in the single-crystalline films. Furthermore, our findings demonstrate that the La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 layer with a thickness down to 1 nm can be used as a pinning layer and strongly coupled with a ferromagnetic La0.7Sr0.3MnO3 layer, leading to a notable exchange bias and coercivity enhancement in a cooling field as small as 5 Oe. Our studies not only provide invaluable insight into the electronic structure of HEOs but also pave the way for a new era of large bias materials for spintronics devices.

Original languageEnglish
Pages (from-to)58643-58650
Number of pages8
JournalACS Applied Materials and Interfaces
Volume15
Issue number50
DOIs
StatePublished - 20 Dec 2023
Externally publishedYes

Keywords

  • epitaxial films
  • exchange bias effect
  • heterostructures
  • high-entropy oxides
  • perovskite oxide

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