Enhanced energy-storage performance of 0.94NBT-0.06BT thin films induced by a Pb0.8La0.1Ca0.1Ti0.975O3 seed layer

Y. L. Zhang; W. L. Li; W. P. Cao; T. D. Zhang; T. R.G.L. Bai; Y. Yu; Y. F. Hou; Y. Feng; W. D. Fei

doi:10.1016/j.ceramint.2016.06.110

Enhanced energy-storage performance of 0.94NBT-0.06BT thin films induced by a Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer

Y. L. Zhang
, W. L. Li^*
, W. P. Cao
, T. D. Zhang
, T. R.G.L. Bai
, Y. Yu
, Y. F. Hou
, Y. Feng
, W. D. Fei

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

0.94(Na_0.5Bi_0.5TiO₃)-0.06BaTiO₃ ferroelectric thin films with and without the Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer were deposited on platinum-buffered silicon substrates by using Sol–Gel process. The influence of Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer and annealing temperatures on the microstructures, ferroelectric properties and energy-storage performances of the as-prepared films were investigated in details. The low annealing temperature and Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer could improve the values of electric break-down field strength and P_max-P_r, which play a vital role for high recoverable energy-storage density. Owing to the high electric break-down field strength value of 3310 kV/cm, a large recoverable energy density of W=17.2 J/cm³ and a high energy efficiency of η=74.3% were obtained for the 0.94(Na_0.5Bi_0.5TiO₃)-0.06BaTiO₃ thin film with the Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ seed layer, which was annealed at 450 °C.

Original language	English
Pages (from-to)	14788-14792
Number of pages	5
Journal	Ceramics International
Volume	42
Issue number	13
DOIs	https://doi.org/10.1016/j.ceramint.2016.06.110
State	Published - Oct 2016

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Energy-storage
NBT-BT thin films
Sol-gel process

Access to Document

10.1016/j.ceramint.2016.06.110

Cite this

@article{11e0522f5462426d9c5e87a873b3ad43,

title = "Enhanced energy-storage performance of 0.94NBT-0.06BT thin films induced by a Pb0.8La0.1Ca0.1Ti0.975O3 seed layer",

abstract = "0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 ferroelectric thin films with and without the Pb0.8La0.1Ca0.1Ti0.975O3 seed layer were deposited on platinum-buffered silicon substrates by using Sol–Gel process. The influence of Pb0.8La0.1Ca0.1Ti0.975O3 seed layer and annealing temperatures on the microstructures, ferroelectric properties and energy-storage performances of the as-prepared films were investigated in details. The low annealing temperature and Pb0.8La0.1Ca0.1Ti0.975O3 seed layer could improve the values of electric break-down field strength and Pmax-Pr, which play a vital role for high recoverable energy-storage density. Owing to the high electric break-down field strength value of 3310 kV/cm, a large recoverable energy density of W=17.2 J/cm3 and a high energy efficiency of η=74.3\% were obtained for the 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 thin film with the Pb0.8La0.1Ca0.1Ti0.975O3 seed layer, which was annealed at 450 °C.",

keywords = "Energy-storage, NBT-BT thin films, Sol-gel process",

author = "Zhang, \{Y. L.\} and Li, \{W. L.\} and Cao, \{W. P.\} and Zhang, \{T. D.\} and Bai, \{T. R.G.L.\} and Y. Yu and Hou, \{Y. F.\} and Y. Feng and Fei, \{W. D.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd and Techna Group S.r.l.",

year = "2016",

month = oct,

doi = "10.1016/j.ceramint.2016.06.110",

language = "英语",

volume = "42",

pages = "14788--14792",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "13",

}

TY - JOUR

T1 - Enhanced energy-storage performance of 0.94NBT-0.06BT thin films induced by a Pb0.8La0.1Ca0.1Ti0.975O3 seed layer

AU - Zhang, Y. L.

AU - Li, W. L.

AU - Cao, W. P.

AU - Zhang, T. D.

AU - Bai, T. R.G.L.

AU - Yu, Y.

AU - Hou, Y. F.

AU - Feng, Y.

AU - Fei, W. D.

PY - 2016/10

Y1 - 2016/10

N2 - 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 ferroelectric thin films with and without the Pb0.8La0.1Ca0.1Ti0.975O3 seed layer were deposited on platinum-buffered silicon substrates by using Sol–Gel process. The influence of Pb0.8La0.1Ca0.1Ti0.975O3 seed layer and annealing temperatures on the microstructures, ferroelectric properties and energy-storage performances of the as-prepared films were investigated in details. The low annealing temperature and Pb0.8La0.1Ca0.1Ti0.975O3 seed layer could improve the values of electric break-down field strength and Pmax-Pr, which play a vital role for high recoverable energy-storage density. Owing to the high electric break-down field strength value of 3310 kV/cm, a large recoverable energy density of W=17.2 J/cm3 and a high energy efficiency of η=74.3% were obtained for the 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 thin film with the Pb0.8La0.1Ca0.1Ti0.975O3 seed layer, which was annealed at 450 °C.

AB - 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 ferroelectric thin films with and without the Pb0.8La0.1Ca0.1Ti0.975O3 seed layer were deposited on platinum-buffered silicon substrates by using Sol–Gel process. The influence of Pb0.8La0.1Ca0.1Ti0.975O3 seed layer and annealing temperatures on the microstructures, ferroelectric properties and energy-storage performances of the as-prepared films were investigated in details. The low annealing temperature and Pb0.8La0.1Ca0.1Ti0.975O3 seed layer could improve the values of electric break-down field strength and Pmax-Pr, which play a vital role for high recoverable energy-storage density. Owing to the high electric break-down field strength value of 3310 kV/cm, a large recoverable energy density of W=17.2 J/cm3 and a high energy efficiency of η=74.3% were obtained for the 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 thin film with the Pb0.8La0.1Ca0.1Ti0.975O3 seed layer, which was annealed at 450 °C.

KW - Energy-storage

KW - NBT-BT thin films

KW - Sol-gel process

UR - https://www.scopus.com/pages/publications/84977612743

U2 - 10.1016/j.ceramint.2016.06.110

DO - 10.1016/j.ceramint.2016.06.110

M3 - 文章

AN - SCOPUS:84977612743

SN - 0272-8842

VL - 42

SP - 14788

EP - 14792

JO - Ceramics International

JF - Ceramics International

IS - 13

ER -