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Enhanced electrical switching of magnetism in the artificial multiferroic CoFeB/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure

  • Ao pei Wang
  • , Ming Feng*
  • , Chang li Qi
  • , Mei Liu
  • , Hong sheng Jia
  • , Wen Wang
  • , Yuan long E
  • , Ling long Hu
  • , Wei Wang
  • , Hai bo Li
  • *Corresponding author for this work
  • Jilin Normal University
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Multiferroic heterostructure CoFeB/Pb(Mg1/3Nb2/3)O3–PbTiO3 is prepared by depositing CoFeB films on Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystal through direct current magnetron sputtering. The electric field induced magnetism change of CoFeB film was studied by magneto-optical Kerr effect measurement. The magnetic hard/easy axis change was investigated under direct current electric field. Alternative current voltage magneto-optical Kerr effect test indicates the different magnetoelectric mechanism with the change of film thickness. The microwave frequency tunability was observed under the electric field and the tunable ferromagnetic resonance field reaches 190 Oe. Our study provides great opportunities for the application of electric-field tunable information storage devices.

Original languageEnglish
Pages (from-to)80-85
Number of pages6
JournalScripta Materialia
Volume179
DOIs
StatePublished - 1 Apr 2020
Externally publishedYes

Keywords

  • Ferromagnetic resonance field
  • Magneto-optical Kerr effect
  • Magnetoelectric effect
  • Multiferroic composite

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