TY - GEN
T1 - Enabling low temperature copper bonding with an organic monolayer
AU - Ang, Xiao Fang
AU - Wei, Jun
AU - Chen, Zhong
AU - Wong, Chee Cheong
PY - 2009
Y1 - 2009
N2 - Typically, copper material is used as a bonding material in MEMs devices for its excellent mechanical, electrical and hermetic properties. Direct copper bonding, however, requires high temperature (>300°C) to forge a bond due to the oxidative nature of copper. In this study, using an alternative approach based on an organic monolayer coating, we demonstrate metallurgical bonding between two copper surfaces under ambient condition at low bonding temperature below 140°C, while maintaining reliable mechanical joint integrity of 50MPa. This monolayer is believed to behave as a passivation layer, protecting the copper surface against oxidation under ambient conditions. In contrast to a bulk oxide layer, this layer can be easily displaced during mechanical deformation at the bonding interface.
AB - Typically, copper material is used as a bonding material in MEMs devices for its excellent mechanical, electrical and hermetic properties. Direct copper bonding, however, requires high temperature (>300°C) to forge a bond due to the oxidative nature of copper. In this study, using an alternative approach based on an organic monolayer coating, we demonstrate metallurgical bonding between two copper surfaces under ambient condition at low bonding temperature below 140°C, while maintaining reliable mechanical joint integrity of 50MPa. This monolayer is believed to behave as a passivation layer, protecting the copper surface against oxidation under ambient conditions. In contrast to a bulk oxide layer, this layer can be easily displaced during mechanical deformation at the bonding interface.
KW - Copper
KW - Organic monolayer
KW - Thermocompression bonding
UR - https://www.scopus.com/pages/publications/73549117717
U2 - 10.4028/www.scientific.net/AMR.74.133
DO - 10.4028/www.scientific.net/AMR.74.133
M3 - 会议稿件
AN - SCOPUS:73549117717
SN - 0878493212
SN - 9780878493210
T3 - Advanced Materials Research
SP - 133
EP - 136
BT - NEMS/MEMS Technology and Devices - Selected, peer reviewed papers from the International Conference on Materials for Advanced Technologies 2009, ICMAT 2009
T2 - International Conference on Materials for Advanced Technologies, ICMAT 2009
Y2 - 28 June 2009 through 3 July 2009
ER -