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Electronic structure and optical properties of Sn-doped ZnO

  • Xiurong Qu*
  • , Shuchen Lü
  • , Lina Bai
  • , Qingguo Meng
  • , Dechang Jia
  • *Corresponding author for this work
  • Harbin Normal University

Research output: Contribution to journalArticlepeer-review

Abstract

A deeper understanding on the atomic and electronic structure of ZnO material is crucial for explaining, predicting, and optimizing its properties, and to suggest materials for better performance. In this work, we present our first-principle studies of the energy bands associated with Sn impurity in ZnO using supercell models. We find that, due to Sn doping, the conduction band moves to the low-energy region, and the band gap becomes smaller than that of pure ZnO. In terms of the calculated band structures, we are also able to explain qualitatively the measured optical properties of Sn-doped ZnO powders.

Original languageEnglish
Pages (from-to)268-270
Number of pages3
JournalPhysica B: Condensed Matter
Volume407
Issue number2
DOIs
StatePublished - 15 Jan 2011

Keywords

  • Electronic structure
  • First-principles calculation
  • Optical property
  • Sn-doped ZnO

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