Abstract
This study employs first-principles calculations to explore Zn/Fe/Cu co-doped LiNbO3 crystals for holographic storage optimization. Results reveal that Cu 3d and Fe 3d orbitals govern impurity states within the bandgap, while Zn2+ doping modulates defect configurations via concentration-dependent site occupation. Below threshold concentrations, Zn2+ preserves Fe3+/Cu2+ occupancy at Li sites, whereas excess Zn2+ drives Fe3+/Cu2+ to Nb sites due to steric effects. High [Li]/[Nb] ratios suppress intrinsic defects, enabling self-compensated FeNb2−+CuLi++ZnLi+ complexes that intensify 452 nm (Cu-related) and 649 nm (Fe-related) absorption peaks. The optimized configuration of high [Li]/[Nb] ratios model exhibits enhanced photoconductivity and reduced holographic writing time through minimized electron trapping and improved charge transport. These synergistic effects arise from tailored defect engineering, where Zn2+ optimizes dopant distribution while Li-rich conditions stabilize the defect complex. The dual absorption peaks facilitate efficient charge transfer for holographic recording and readout, positioning Zn:Fe:Cu:LiNbO3 crystal as a promising candidate for high-speed, high-fidelity optical storage systems with balanced photo response and damage resistance.
| Original language | English |
|---|---|
| Article number | 116109 |
| Journal | Solid State Communications |
| Volume | 404 |
| DOIs | |
| State | Published - 1 Oct 2025 |
| Externally published | Yes |
Keywords
- Absorption spectrum
- Electronic structure
- First principle
- Zn:Fe:Cu:LiNbO crystal
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