Electron irradiation modified point defects of SiC nanoparticles with tunable high electromagnetic wave absorption

Silicon carbide nanoparticles (SiC nps) were modified by changing the injection amount using 1 MeV high-energy electron as radiation source. When the injection volume reaches 5ⅹ10¹³ cm⁻², the irradiated particles produce defect structures sufficient to optimize the electromagnetic wave absorption performance. With the increase of beam amount, the value of g detected by electron paramagnetic resonance (EPR) energy spectrum moves towards the silicon suspension bond, and the macroscopic electromagnetic wave absorption peak gradually moves towards the low frequency, accompanied by the enhancement of absorption intensity and the increase of absorption bandwidth. When the injection volume reaches 3ⅹ10¹⁴ cm⁻², the loss value of −62.79 dB is achieved at the optimal thickness of 2.56 mm, and the absorption frequency band covers the entire Ku band. SiC presents point defects, and carbon atoms leave the original lattice position due to electron irradiation, forming carbon vacancies, resulting in uneven charge distribution inside the material, resulting in dipoles of orientation polarization, which further affects the electromagnetic wave absorption performance. As the irradiation dosage increases, the defects become denser and purer. This leads to higher electromagnetic wave absorption intensity and a correspondingly lower optimal absorption frequency. Thus, the modification of SiC nps through irradiation achieves tunable absorbers.