Electron-hole competition in doped KNSBN crystal

Yangqiu Li; Yan Li; Zhongxiang Zhou; Xiudong Shun; Kebin Xu; Gengfu Zhou; Yundong Zhang

Electron-hole competition in doped KNSBN crystal

Yangqiu Li^*
, Yan Li
, Zhongxiang Zhou
, Xiudong Shun
, Kebin Xu
, Gengfu Zhou
, Yundong Zhang

^*Corresponding author for this work

School of Physics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The electron-hole competition in doped KNSBN crystal was analysed by measuring the recording and the erasing kinetics of doped KNSBN crystals. It is shown that shorter the response time, sharper the competition between electrons and holes in doped KNSBN crystals. It leads to the decrease of the net index modulation and the diffraction efficiency. The reason of the increase of the hole carriers had been analysed in reduced Co:KNSBN crystals. The estimated effective carrier density is about the order of 10¹⁵ cm^-3.

Original language	English
Pages (from-to)	972-977
Number of pages	6
Journal	Guangxue Xuebao/Acta Optica Sinica
Volume	16
Issue number	7
State	Published - Jul 1996

Cite this

@article{3042c95798694bc4a4a2bfe239bc32c3,

title = "Electron-hole competition in doped KNSBN crystal",

abstract = "The electron-hole competition in doped KNSBN crystal was analysed by measuring the recording and the erasing kinetics of doped KNSBN crystals. It is shown that shorter the response time, sharper the competition between electrons and holes in doped KNSBN crystals. It leads to the decrease of the net index modulation and the diffraction efficiency. The reason of the increase of the hole carriers had been analysed in reduced Co:KNSBN crystals. The estimated effective carrier density is about the order of 1015 cm-3.",

author = "Yangqiu Li and Yan Li and Zhongxiang Zhou and Xiudong Shun and Kebin Xu and Gengfu Zhou and Yundong Zhang",

year = "1996",

month = jul,

language = "英语",

volume = "16",

pages = "972--977",

journal = "Guangxue Xuebao/Acta Optica Sinica",

issn = "0253-2239",

publisher = "Chinese Laser Press",

number = "7",

}

TY - JOUR

T1 - Electron-hole competition in doped KNSBN crystal

AU - Li, Yangqiu

AU - Li, Yan

AU - Zhou, Zhongxiang

AU - Shun, Xiudong

AU - Xu, Kebin

AU - Zhou, Gengfu

AU - Zhang, Yundong

PY - 1996/7

Y1 - 1996/7

N2 - The electron-hole competition in doped KNSBN crystal was analysed by measuring the recording and the erasing kinetics of doped KNSBN crystals. It is shown that shorter the response time, sharper the competition between electrons and holes in doped KNSBN crystals. It leads to the decrease of the net index modulation and the diffraction efficiency. The reason of the increase of the hole carriers had been analysed in reduced Co:KNSBN crystals. The estimated effective carrier density is about the order of 1015 cm-3.

AB - The electron-hole competition in doped KNSBN crystal was analysed by measuring the recording and the erasing kinetics of doped KNSBN crystals. It is shown that shorter the response time, sharper the competition between electrons and holes in doped KNSBN crystals. It leads to the decrease of the net index modulation and the diffraction efficiency. The reason of the increase of the hole carriers had been analysed in reduced Co:KNSBN crystals. The estimated effective carrier density is about the order of 1015 cm-3.

UR - https://www.scopus.com/pages/publications/0030198235

M3 - 文章

AN - SCOPUS:0030198235

SN - 0253-2239

VL - 16

SP - 972

EP - 977

JO - Guangxue Xuebao/Acta Optica Sinica

JF - Guangxue Xuebao/Acta Optica Sinica

IS - 7

ER -

Electron-hole competition in doped KNSBN crystal

Abstract

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