Electron field emission of radio frequency magnetron sputtered CN x films annealed at different temperatures

J. J. Li; W. T. Zheng; Z. S. Jin; X. Wang; H. J. Bian; G. R. Gu; Y. N. Zhao; S. H. Meng; X. D. He; J. C. Han

Electron field emission of radio frequency magnetron sputtered CN _x films annealed at different temperatures

J. J. Li
, W. T. Zheng^*
, Z. S. Jin
, X. Wang
, H. J. Bian
, G. R. Gu
, Y. N. Zhao
, S. H. Meng
, X. D. He
, J. C. Han

^*Corresponding author for this work

School of Astronautics

Jilin University
Yanbian University

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The dependence of electron field emission of CN _x films on annealing temperature was examined using voltage-current measurements. The change in the chemical bonding structure induced by annealing treatment was also studied. The CN _x films were deposited using magnetron sputtering in pure N ₂ atmosphere. The electron field emission of CN _x films was found to depend on the variations of the N content and the fraction of sp ² clusters in the films. Optimal electron emission properties were exhibited by CN _x films annealed at 750°C.

Original language	English
Pages (from-to)	2382-2387
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
State	Published - Nov 2003

Cite this

@article{53107915d79f499a953dd643dba0c8f9,

title = "Electron field emission of radio frequency magnetron sputtered CN x films annealed at different temperatures",

abstract = "The dependence of electron field emission of CN x films on annealing temperature was examined using voltage-current measurements. The change in the chemical bonding structure induced by annealing treatment was also studied. The CN x films were deposited using magnetron sputtering in pure N 2 atmosphere. The electron field emission of CN x films was found to depend on the variations of the N content and the fraction of sp 2 clusters in the films. Optimal electron emission properties were exhibited by CN x films annealed at 750°C.",

author = "Li, \{J. J.\} and Zheng, \{W. T.\} and Jin, \{Z. S.\} and X. Wang and Bian, \{H. J.\} and Gu, \{G. R.\} and Zhao, \{Y. N.\} and Meng, \{S. H.\} and He, \{X. D.\} and Han, \{J. C.\}",

year = "2003",

month = nov,

language = "英语",

volume = "21",

pages = "2382--2387",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Electron field emission of radio frequency magnetron sputtered CN x films annealed at different temperatures

AU - Li, J. J.

AU - Zheng, W. T.

AU - Jin, Z. S.

AU - Wang, X.

AU - Bian, H. J.

AU - Gu, G. R.

AU - Zhao, Y. N.

AU - Meng, S. H.

AU - He, X. D.

AU - Han, J. C.

PY - 2003/11

Y1 - 2003/11

N2 - The dependence of electron field emission of CN x films on annealing temperature was examined using voltage-current measurements. The change in the chemical bonding structure induced by annealing treatment was also studied. The CN x films were deposited using magnetron sputtering in pure N 2 atmosphere. The electron field emission of CN x films was found to depend on the variations of the N content and the fraction of sp 2 clusters in the films. Optimal electron emission properties were exhibited by CN x films annealed at 750°C.

AB - The dependence of electron field emission of CN x films on annealing temperature was examined using voltage-current measurements. The change in the chemical bonding structure induced by annealing treatment was also studied. The CN x films were deposited using magnetron sputtering in pure N 2 atmosphere. The electron field emission of CN x films was found to depend on the variations of the N content and the fraction of sp 2 clusters in the films. Optimal electron emission properties were exhibited by CN x films annealed at 750°C.

UR - https://www.scopus.com/pages/publications/0942267566

M3 - 文章

AN - SCOPUS:0942267566

SN - 1071-1023

VL - 21

SP - 2382

EP - 2387

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Electron field emission of radio frequency magnetron sputtered CN _x films annealed at different temperatures

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