Electron field emission enhancement effects of nano-diamond films

S. G. Wang; Qing Zhang; S. F. Yoon; J. Ahn; Q. Zhou; Q. Wang; D. J. Yang; J. Q. Li; Sam Zhang Shanyong

doi:10.1016/S0257-8972(02)00901-5

Electron field emission enhancement effects of nano-diamond films

S. G. Wang^*
, Qing Zhang
, S. F. Yoon
, J. Ahn
, Q. Zhou
, Q. Wang
, D. J. Yang
, J. Q. Li
, Sam Zhang Shanyong

^*Corresponding author for this work

Microelectronics Centre
Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

In this paper, electron field emission properties of nano-diamond films, which were prepared using either CH₄/H₂/ N₂ or CH₄ /Ar microwave plasma enhanced chemical vapor deposition, were studied. X-ray photoelectron spectroscopy detection indicates that nitrogen was incorporated into the nano-diamond film grown in CH₄/H₂/N₂ mixture. This nano-diamond film shows a very low threshold electric field of 2.2 V/μm and a high emission current density of 720 μA/cm² at applied field of 6.4 V/μm. Nitrogen incorporation, high grain boundary density and sp²-bonded non-diamond components in the films are believed to be responsible for the electron emission enhancement.

Original language	English
Pages (from-to)	143-147
Number of pages	5
Journal	Surface and Coatings Technology
Volume	167
Issue number	2-3
DOIs	https://doi.org/10.1016/S0257-8972(02)00901-5
State	Published - 22 Apr 2003
Externally published	Yes

Keywords

Electron emitter
Electron field emission
MPECVD
Nano-diamond film

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10.1016/S0257-8972(02)00901-5

Cite this

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title = "Electron field emission enhancement effects of nano-diamond films",

abstract = "In this paper, electron field emission properties of nano-diamond films, which were prepared using either CH4/H2/ N2 or CH4 /Ar microwave plasma enhanced chemical vapor deposition, were studied. X-ray photoelectron spectroscopy detection indicates that nitrogen was incorporated into the nano-diamond film grown in CH4/H2/N2 mixture. This nano-diamond film shows a very low threshold electric field of 2.2 V/μm and a high emission current density of 720 μA/cm2 at applied field of 6.4 V/μm. Nitrogen incorporation, high grain boundary density and sp2-bonded non-diamond components in the films are believed to be responsible for the electron emission enhancement.",

keywords = "Electron emitter, Electron field emission, MPECVD, Nano-diamond film",

author = "Wang, \{S. G.\} and Qing Zhang and Yoon, \{S. F.\} and J. Ahn and Q. Zhou and Q. Wang and Yang, \{D. J.\} and Li, \{J. Q.\} and Shanyong, \{Sam Zhang\}",

year = "2003",

month = apr,

day = "22",

doi = "10.1016/S0257-8972(02)00901-5",

language = "英语",

volume = "167",

pages = "143--147",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Electron field emission enhancement effects of nano-diamond films

AU - Wang, S. G.

AU - Zhang, Qing

AU - Yoon, S. F.

AU - Ahn, J.

AU - Zhou, Q.

AU - Wang, Q.

AU - Yang, D. J.

AU - Li, J. Q.

AU - Shanyong, Sam Zhang

PY - 2003/4/22

Y1 - 2003/4/22

N2 - In this paper, electron field emission properties of nano-diamond films, which were prepared using either CH4/H2/ N2 or CH4 /Ar microwave plasma enhanced chemical vapor deposition, were studied. X-ray photoelectron spectroscopy detection indicates that nitrogen was incorporated into the nano-diamond film grown in CH4/H2/N2 mixture. This nano-diamond film shows a very low threshold electric field of 2.2 V/μm and a high emission current density of 720 μA/cm2 at applied field of 6.4 V/μm. Nitrogen incorporation, high grain boundary density and sp2-bonded non-diamond components in the films are believed to be responsible for the electron emission enhancement.

AB - In this paper, electron field emission properties of nano-diamond films, which were prepared using either CH4/H2/ N2 or CH4 /Ar microwave plasma enhanced chemical vapor deposition, were studied. X-ray photoelectron spectroscopy detection indicates that nitrogen was incorporated into the nano-diamond film grown in CH4/H2/N2 mixture. This nano-diamond film shows a very low threshold electric field of 2.2 V/μm and a high emission current density of 720 μA/cm2 at applied field of 6.4 V/μm. Nitrogen incorporation, high grain boundary density and sp2-bonded non-diamond components in the films are believed to be responsible for the electron emission enhancement.

KW - Electron emitter

KW - Electron field emission

KW - MPECVD

KW - Nano-diamond film

UR - https://www.scopus.com/pages/publications/0037461205

U2 - 10.1016/S0257-8972(02)00901-5

DO - 10.1016/S0257-8972(02)00901-5

M3 - 文章

AN - SCOPUS:0037461205

SN - 0257-8972

VL - 167

SP - 143

EP - 147

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 2-3

ER -

Electron field emission enhancement effects of nano-diamond films

Abstract

Keywords

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