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Electroluminescence of as-sputtered silicon-rich SiOx films

  • Wa Li Zhang
  • , Sam Zhang*
  • , Ming Yang
  • , Zhen Liu
  • , Zhan Hong Cen
  • , Tupei Chen
  • , Dongping Liu
  • *Corresponding author for this work
  • Nanyang Technological University
  • Dalian Minzu University

Research output: Contribution to journalArticlepeer-review

Abstract

Si-rich oxide films (SiOx, 0 < x < 2) were synthesized by reactive magnetron sputtering of a single Si target in a gas mixture of argon and oxygen. Intense visible electroluminescence was observed from the as-deposited SiOx film. The microstructure of the as-sputtered SiOx films was characterized by Raman and X-ray photoelectron spectroscopy techniques. Nanoscale amorphous Si clusters formed in the as-sputtered films. The electroluminescence was attributed to the oxygen-deficient defect luminescent centres and the formation of the amorphous Si nanoclusters.

Original languageEnglish
Pages (from-to)1043-1048
Number of pages6
JournalVacuum
Volume84
Issue number8
DOIs
StatePublished - 24 Mar 2010
Externally publishedYes

Keywords

  • Electroluminescence
  • Silicon-rich SiO films
  • Sputtering

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