Abstract
Si-rich oxide films (SiOx, 0 < x < 2) were synthesized by reactive magnetron sputtering of a single Si target in a gas mixture of argon and oxygen. Intense visible electroluminescence was observed from the as-deposited SiOx film. The microstructure of the as-sputtered SiOx films was characterized by Raman and X-ray photoelectron spectroscopy techniques. Nanoscale amorphous Si clusters formed in the as-sputtered films. The electroluminescence was attributed to the oxygen-deficient defect luminescent centres and the formation of the amorphous Si nanoclusters.
| Original language | English |
|---|---|
| Pages (from-to) | 1043-1048 |
| Number of pages | 6 |
| Journal | Vacuum |
| Volume | 84 |
| Issue number | 8 |
| DOIs | |
| State | Published - 24 Mar 2010 |
| Externally published | Yes |
Keywords
- Electroluminescence
- Silicon-rich SiO films
- Sputtering
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