Electrodeposition of CuInxGa1-xSe2 from a 1-butyl-3-methylimidazolium trifluoromethanesulfonate ionic liquid

Shanshan Ji; Peixia Yang; Jinqiu Zhang; Ye Lian; Jie Zhang; Maozhong An

doi:10.1016/j.matlet.2014.06.147

Electrodeposition of CuIn_xGa_1-xSe₂ from a 1-butyl-3-methylimidazolium trifluoromethanesulfonate ionic liquid

Shanshan Ji
, Peixia Yang
, Jinqiu Zhang
, Ye Lian
, Jie Zhang
, Maozhong An^*

^*Corresponding author for this work

School of Chemistry and Chemical Engineering, Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

BMIm-OTF (1-Butyl-3-methylimidazolium trifluoromethanesulfonate) ionic liquid was used for the first time to prepare Cu_1.00In _0.83Ga_0.23Se_1.64 thin films. The standard CIGS sample was calibrated using its inductively coupled plasma optical emission. The morphological properties were detected using scanning electron microscopy. The band gap of the CIGS thin film was approximately 1.55 eV, as measured using UV-visible absorption spectra. The carrier concentration and average Hall coefficient of the CIGS thin films were 2.741×10²⁰ cm ^-3 and 2.277×10^-2 cm³/C, respectively.

Original language	English
Pages (from-to)	14-16
Number of pages	3
Journal	Materials Letters
Volume	133
DOIs	https://doi.org/10.1016/j.matlet.2014.06.147
State	Published - 15 Oct 2014
Externally published	Yes

Keywords

CIGS thin films
Electrodeposition
Ionic liquid

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10.1016/j.matlet.2014.06.147

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title = "Electrodeposition of CuInxGa1-xSe2 from a 1-butyl-3-methylimidazolium trifluoromethanesulfonate ionic liquid",

abstract = "BMIm-OTF (1-Butyl-3-methylimidazolium trifluoromethanesulfonate) ionic liquid was used for the first time to prepare Cu1.00In 0.83Ga0.23Se1.64 thin films. The standard CIGS sample was calibrated using its inductively coupled plasma optical emission. The morphological properties were detected using scanning electron microscopy. The band gap of the CIGS thin film was approximately 1.55 eV, as measured using UV-visible absorption spectra. The carrier concentration and average Hall coefficient of the CIGS thin films were 2.741×1020 cm -3 and 2.277×10-2 cm3/C, respectively.",

keywords = "CIGS thin films, Electrodeposition, Ionic liquid",

author = "Shanshan Ji and Peixia Yang and Jinqiu Zhang and Ye Lian and Jie Zhang and Maozhong An",

year = "2014",

month = oct,

day = "15",

doi = "10.1016/j.matlet.2014.06.147",

language = "英语",

volume = "133",

pages = "14--16",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Electrodeposition of CuInxGa1-xSe2 from a 1-butyl-3-methylimidazolium trifluoromethanesulfonate ionic liquid

AU - Ji, Shanshan

AU - Yang, Peixia

AU - Zhang, Jinqiu

AU - Lian, Ye

AU - Zhang, Jie

AU - An, Maozhong

PY - 2014/10/15

Y1 - 2014/10/15

N2 - BMIm-OTF (1-Butyl-3-methylimidazolium trifluoromethanesulfonate) ionic liquid was used for the first time to prepare Cu1.00In 0.83Ga0.23Se1.64 thin films. The standard CIGS sample was calibrated using its inductively coupled plasma optical emission. The morphological properties were detected using scanning electron microscopy. The band gap of the CIGS thin film was approximately 1.55 eV, as measured using UV-visible absorption spectra. The carrier concentration and average Hall coefficient of the CIGS thin films were 2.741×1020 cm -3 and 2.277×10-2 cm3/C, respectively.

AB - BMIm-OTF (1-Butyl-3-methylimidazolium trifluoromethanesulfonate) ionic liquid was used for the first time to prepare Cu1.00In 0.83Ga0.23Se1.64 thin films. The standard CIGS sample was calibrated using its inductively coupled plasma optical emission. The morphological properties were detected using scanning electron microscopy. The band gap of the CIGS thin film was approximately 1.55 eV, as measured using UV-visible absorption spectra. The carrier concentration and average Hall coefficient of the CIGS thin films were 2.741×1020 cm -3 and 2.277×10-2 cm3/C, respectively.

KW - CIGS thin films

KW - Electrodeposition

KW - Ionic liquid

UR - https://www.scopus.com/pages/publications/84904185021

U2 - 10.1016/j.matlet.2014.06.147

DO - 10.1016/j.matlet.2014.06.147

M3 - 文章

AN - SCOPUS:84904185021

SN - 0167-577X

VL - 133

SP - 14

EP - 16

JO - Materials Letters

JF - Materials Letters

ER -

Electrodeposition of CuIn_xGa_1-xSe₂ from a 1-butyl-3-methylimidazolium trifluoromethanesulfonate ionic liquid

Abstract

Keywords

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