Electrical resistivity distribution of silicon ingot grown by cold crucible continuous melting and directional solidification

A multicrystalline silicon ingot was grown by cold crucible continuous melting and directional solidification. The electrical resistivity, shallow level impurities' concentrations and microstructure of the ingot were measured, and their relationships were studied and discussed. The results show that in the vertical direction the electrical resistivity gets its maximum value at the height of 90 mm and then decreases toward both sides. In the horizontal direction, it is distributed uniformly in the inner area and increases slightly in the peripheral area. The electrical resistivity of the silicon ingot is affected by its shallow level impurities' concentrations and its microstructure. Among these impurities the effect of Al is less than those of B and P, since Al tends to form complex precipitates with other elements.